MMBT2222ALT1HTSA1
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Infineon Technologies MMBT2222ALT1HTSA1

Manufacturer No:
MMBT2222ALT1HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222ALT1HTSA1 is a high-performance, general-purpose NPN bipolar transistor manufactured by Infineon Technologies. This transistor is designed for a wide range of applications requiring small signal amplification, switching, and signal processing. It is housed in a compact SOT-23 package, making it ideal for surface-mount applications and space-constrained designs.

Key Specifications

Specification Value Unit
Maximum Collector Current (IC) 600 mA
Maximum Collector-Base Voltage (VCBO) 75 V
Maximum Collector-Emitter Voltage (VCEO) 40 V
Maximum Emitter-Base Voltage (VEBO) 6 V
Transition Frequency (fT) 300 MHz
Package SOT-23-3
Power - Max 330 mW
Operating Temperature -55 to +150 °C
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA

Key Features

  • High Current Gain (hFE): Provides high amplification capabilities in signal circuits.
  • Low Saturation Voltage: Ensures minimal voltage drop when the transistor is fully on.
  • Fast Switching Speed: Allows for rapid on/off transitions, suitable for high-frequency applications.
  • Compact SOT-23 Package: Ideal for space-constrained designs and surface-mount applications.
  • Low Cost: Economical component for various electronic applications.
  • Lead Free / RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

The MMBT2222ALT1HTSA1 is widely used in various electronic circuits for amplification, switching, and signal processing. It is suitable for low-power applications such as:

  • Audio amplifiers
  • Switching circuits
  • Voltage regulator circuits
  • General-purpose amplification in consumer electronics
  • Automotive and industrial control systems

Q & A

  1. What is the maximum collector current of the MMBT2222ALT1HTSA1?

    The maximum collector current is 600 mA.

  2. What is the maximum collector-emitter voltage of the MMBT2222ALT1HTSA1?

    The maximum collector-emitter voltage is 40 V.

  3. What is the transition frequency of the MMBT2222ALT1HTSA1?

    The transition frequency is 300 MHz.

  4. In what package is the MMBT2222ALT1HTSA1 housed?

    The transistor is housed in a SOT-23-3 package.

  5. What is the operating temperature range of the MMBT2222ALT1HTSA1?

    The operating temperature range is -55 to +150 °C.

  6. Is the MMBT2222ALT1HTSA1 RoHS compliant?

    Yes, the transistor is lead-free and RoHS compliant.

  7. What are some common applications of the MMBT2222ALT1HTSA1?

    Common applications include audio amplifiers, switching circuits, voltage regulator circuits, and general-purpose amplification in consumer electronics.

  8. What is the DC current gain (hFE) of the MMBT2222ALT1HTSA1?

    The minimum DC current gain (hFE) is 100 at 150 mA and 10 V.

  9. What is the Vce saturation voltage of the MMBT2222ALT1HTSA1?

    The Vce saturation voltage is 1 V at 50 mA and 500 mA.

  10. Is the MMBT2222ALT1HTSA1 suitable for high-frequency applications?

    Yes, it is suitable due to its fast switching speed and high transition frequency.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:330 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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$0.38
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