BC856A
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Diotec Semiconductor BC856A

Manufacturer No:
BC856A
Manufacturer:
Diotec Semiconductor
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856A is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Diotec Semiconductor AG. It is designed for a wide range of applications, including signal processing, switching, and amplification. The transistor is packaged in a SOT-23 (TO-236) surface mount package, making it suitable for modern electronic designs where space is a concern.

This transistor is part of a family that includes several variants with different current gain groups, ensuring flexibility in design choices. It is compliant with various regulatory standards, including RoHS and REACH, and is available in industrial and AEC-Q101 qualified versions.

Key Specifications

Parameter Value Unit
Type of Transistor PNP
Polarization Bipolar
Collector-Emitter Voltage (VCEO) 65 V
Collector Current (IC) 0.1 A
Power Dissipation (Ptot) 0.25 W
Pulsed Collector Current (ICM) 0.2 A
Current Gain (hFE) 125 (Typical for Group A)
Collector-Emitter Saturation Voltage (VCEsat) 300 mV (Typical) V
Base-Emitter Saturation Voltage (VBEsat) 650 mV (Typical) V
Junction Temperature (Tj) -55 to 150 °C
Storage Temperature (Ts) -55 to 150 °C
Package Type SOT-23 (TO-236)
Mounting Type Surface Mount

Key Features

  • General Purpose: Suitable for a wide range of applications including signal processing, switching, and amplification.
  • Current Gain Groups: Available in three current gain groups (A, B, C) to cater to different design requirements.
  • Regulatory Compliance: Compliant with RoHS, REACH, and Conflict Minerals regulations. Also available in AEC-Q101 qualified versions.
  • High Temperature Rating: Junction temperature up to 150°C, making it suitable for high-temperature environments.[
  • Low Power Dissipation: Maximum power dissipation of 250 mW, which is suitable for low-power applications.[

Applications

  • Signal Processing: Ideal for signal amplification and processing in various electronic circuits.[
  • Switching: Can be used in switching applications due to its fast switching times and low saturation voltage.[
  • Amplification: Suitable for amplifier circuits requiring low noise and high current gain.[
  • Automotive Industry: AEC-Q101 qualified versions make it suitable for automotive applications.[

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC856A transistor?

    The collector-emitter voltage (VCEO) of the BC856A transistor is 65 V.

  2. What is the maximum collector current (IC) of the BC856A transistor?

    The maximum collector current (IC) of the BC856A transistor is 0.1 A.

  3. What is the power dissipation (Ptot) of the BC856A transistor?

    The power dissipation (Ptot) of the BC856A transistor is 0.25 W.

  4. What are the typical applications of the BC856A transistor?

    The BC856A transistor is typically used in signal processing, switching, and amplification applications.[

  5. Is the BC856A transistor compliant with automotive standards?

    Yes, the BC856A transistor is available in AEC-Q101 qualified versions, making it suitable for automotive applications.[

  6. What is the junction temperature range of the BC856A transistor?

    The junction temperature range of the BC856A transistor is -55 to 150°C.[

  7. What is the package type of the BC856A transistor?

    The BC856A transistor is packaged in a SOT-23 (TO-236) surface mount package.[

  8. Is the BC856A transistor compliant with RoHS and REACH regulations?

    Yes, the BC856A transistor is compliant with RoHS and REACH regulations.[

  9. What are the different current gain groups available for the BC856A transistor?

    The BC856A transistor is available in three current gain groups: A, B, and C.[

  10. What is the typical current gain (hFE) of the BC856A transistor?

    The typical current gain (hFE) of the BC856A transistor is 125 for Group A.[

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC856A BC856B BC856C BC856AW BC850A
Manufacturer Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor
Product Status Active Active Active Active Active
Transistor Type PNP PNP PNP PNP NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V 65 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 250 mW 250 mW 250 mW 200 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-323 SOT-23-3 (TO-236)

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