BC856C
  • Share:

Diotec Semiconductor BC856C

Manufacturer No:
BC856C
Manufacturer:
Diotec Semiconductor
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856C is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Diotec Semiconductor. It is housed in a SOT-23 package and is designed for a wide range of applications including signal processing, switching, and amplification. This transistor is part of the BC856 series, which offers different current gain groups, making it versatile for various uses.

Key Specifications

Parameter Value
Type of Transistor PNP, Bipolar
Collector-Emitter Voltage (VCEO) 65 V
Collector Current (IC) 0.1 A (100 mA)
Power Dissipation (Ptot) 0.25 W (250 mW)
Case SOT-23
Mounting SMD
Current Gain (hFE) 180 / 290 / 520 (depending on the group)
Junction Temperature (Tj) -55°C to 150°C
Collector-Emitter Saturation Voltage (VCEsat) 500 mV (commercial grade), 300 mV / 650 mV (industrial/AEC-Q101 grade)

Key Features

  • General-purpose PNP bipolar junction transistor.
  • Three current gain groups (hFE of 180, 290, and 520).
  • Compliant with RoHS, REACH, and Conflict Minerals regulations.
  • SOT-23 package suitable for surface mount technology (SMT).
  • High collector-emitter voltage (VCEO) of 65 V.
  • Low power dissipation of 0.25 W.
  • Wide operating temperature range from -55°C to 150°C.
  • AEC-Q101 compliant and qualified versions available.

Applications

  • Signal processing.
  • Switching circuits.
  • Amplification in various electronic devices.
  • Automotive applications (AEC-Q101 compliant versions).
  • General-purpose electronic circuits requiring a reliable PNP transistor.

Q & A

  1. What is the collector-emitter voltage of the BC856C transistor?

    The collector-emitter voltage (VCEO) of the BC856C transistor is 65 V.

  2. What is the maximum collector current of the BC856C transistor?

    The maximum collector current (IC) of the BC856C transistor is 0.1 A (100 mA).

  3. What is the power dissipation of the BC856C transistor?

    The power dissipation (Ptot) of the BC856C transistor is 0.25 W (250 mW).

  4. What is the package type of the BC856C transistor?

    The BC856C transistor is housed in a SOT-23 package.

  5. Is the BC856C transistor RoHS compliant?

    Yes, the BC856C transistor is compliant with RoHS, REACH, and Conflict Minerals regulations.

  6. What are the typical applications of the BC856C transistor?

    The BC856C transistor is typically used in signal processing, switching, and amplification applications.

  7. What are the different current gain groups available for the BC856C transistor?

    The BC856C transistor is available in three current gain groups: hFE of 180, 290, and 520.

  8. What is the junction temperature range of the BC856C transistor?

    The junction temperature range of the BC856C transistor is from -55°C to 150°C.

  9. Are there AEC-Q101 compliant versions of the BC856C transistor available?

    Yes, AEC-Q101 compliant and qualified versions of the BC856C transistor are available.

  10. How is the BC856C transistor mounted?

    The BC856C transistor is mounted using surface mount technology (SMT).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.02
45,352

Please send RFQ , we will respond immediately.

Same Series
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC856C BC856CW BC856A BC856B
Manufacturer Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 200 mW 250 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-323 SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
PBHV9040T,215
PBHV9040T,215
Nexperia USA Inc.
TRANS PNP 400V 0.25A TO236AB
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
BC846AWT1
BC846AWT1
onsemi
TRANS NPN 65V 0.1A SC70-3
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3

Related Product By Brand

BAS70-05
BAS70-05
Diotec Semiconductor
SCHOTTKY SOT-23 70V 0.07A
BAS70-04W
BAS70-04W
Diotec Semiconductor
Schottky, 70V, 0.07A
BAT54-AQ
BAT54-AQ
Diotec Semiconductor
SCHOTTKY SOT-23 30V 0.2A
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
LL4150
LL4150
Diotec Semiconductor
DIODE SOD-80 50V 0.3A 4NS
BAT54
BAT54
Diotec Semiconductor
SchottkyD, 30V, 0.2A
ZMM18R13
ZMM18R13
Diotec Semiconductor
DIODE ZENER 18V 500MW SOD80C
BZX84C22-AQ
BZX84C22-AQ
Diotec Semiconductor
DIODE ZENER 22V 300MW SOT23-3
BC847S-AQ
BC847S-AQ
Diotec Semiconductor
BJT SOT-363 45V 100MA
BC856B-AQ
BC856B-AQ
Diotec Semiconductor
TRANS PNP 65V 0.1A SOT23-3
BCP55-16
BCP55-16
Diotec Semiconductor
TRANS NPN 60V 1A SOT223
BC847C
BC847C
Diotec Semiconductor
TRANS NPN 45V 100A SOT23-3