BC856C
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Diotec Semiconductor BC856C

Manufacturer No:
BC856C
Manufacturer:
Diotec Semiconductor
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856C is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Diotec Semiconductor. It is housed in a SOT-23 package and is designed for a wide range of applications including signal processing, switching, and amplification. This transistor is part of the BC856 series, which offers different current gain groups, making it versatile for various uses.

Key Specifications

Parameter Value
Type of Transistor PNP, Bipolar
Collector-Emitter Voltage (VCEO) 65 V
Collector Current (IC) 0.1 A (100 mA)
Power Dissipation (Ptot) 0.25 W (250 mW)
Case SOT-23
Mounting SMD
Current Gain (hFE) 180 / 290 / 520 (depending on the group)
Junction Temperature (Tj) -55°C to 150°C
Collector-Emitter Saturation Voltage (VCEsat) 500 mV (commercial grade), 300 mV / 650 mV (industrial/AEC-Q101 grade)

Key Features

  • General-purpose PNP bipolar junction transistor.
  • Three current gain groups (hFE of 180, 290, and 520).
  • Compliant with RoHS, REACH, and Conflict Minerals regulations.
  • SOT-23 package suitable for surface mount technology (SMT).
  • High collector-emitter voltage (VCEO) of 65 V.
  • Low power dissipation of 0.25 W.
  • Wide operating temperature range from -55°C to 150°C.
  • AEC-Q101 compliant and qualified versions available.

Applications

  • Signal processing.
  • Switching circuits.
  • Amplification in various electronic devices.
  • Automotive applications (AEC-Q101 compliant versions).
  • General-purpose electronic circuits requiring a reliable PNP transistor.

Q & A

  1. What is the collector-emitter voltage of the BC856C transistor?

    The collector-emitter voltage (VCEO) of the BC856C transistor is 65 V.

  2. What is the maximum collector current of the BC856C transistor?

    The maximum collector current (IC) of the BC856C transistor is 0.1 A (100 mA).

  3. What is the power dissipation of the BC856C transistor?

    The power dissipation (Ptot) of the BC856C transistor is 0.25 W (250 mW).

  4. What is the package type of the BC856C transistor?

    The BC856C transistor is housed in a SOT-23 package.

  5. Is the BC856C transistor RoHS compliant?

    Yes, the BC856C transistor is compliant with RoHS, REACH, and Conflict Minerals regulations.

  6. What are the typical applications of the BC856C transistor?

    The BC856C transistor is typically used in signal processing, switching, and amplification applications.

  7. What are the different current gain groups available for the BC856C transistor?

    The BC856C transistor is available in three current gain groups: hFE of 180, 290, and 520.

  8. What is the junction temperature range of the BC856C transistor?

    The junction temperature range of the BC856C transistor is from -55°C to 150°C.

  9. Are there AEC-Q101 compliant versions of the BC856C transistor available?

    Yes, AEC-Q101 compliant and qualified versions of the BC856C transistor are available.

  10. How is the BC856C transistor mounted?

    The BC856C transistor is mounted using surface mount technology (SMT).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC856C BC856CW BC856A BC856B
Manufacturer Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 200 mW 250 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-323 SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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