BC847BFAQ-7B
  • Share:

Diodes Incorporated BC847BFAQ-7B

Manufacturer No:
BC847BFAQ-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BFAQ-7B is a dual NPN small signal surface mount transistor produced by Diodes Incorporated. This transistor is designed for high-performance applications, offering a compact and efficient solution for various electronic circuits. With its ultra-small SOT363 package, it is ideally suited for automated insertion and is fully compliant with RoHS and other environmental standards.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Collector-Base Voltage VCBO 50 V IC = 100µA, IB = 0
Collector-Emitter Voltage VCEO 45 V IC = 10mA, IB = 0
Emitter-Base Voltage VEBO 6 V IE = 100µA, IC = 0
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Power Dissipation PD 200 mW
Thermal Resistance, Junction to Ambient RθJA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
DC Current Gain hFE 200 - 450 VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage VCE(sat) 100 - 400 mV IC = 10mA, IB = 0.5mA; IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(sat) mV

Key Features

  • Ultra-Small Surface Mount Package: The BC847BFAQ-7B is packaged in the SOT363 format, making it highly suitable for compact and space-efficient designs.
  • High Voltage Ratings: With a collector-base voltage (VCBO) of 50V and a collector-emitter voltage (VCEO) of 45V, this transistor is capable of handling high voltage applications.
  • High Current Capability: It has a collector current (IC) of up to 100mA and a peak collector current (ICM) of 200mA.
  • Environmental Compliance: The device is totally lead-free, fully RoHS compliant, and halogen- and antimony-free, making it an environmentally friendly choice.
  • Automotive Compatibility: Suitable for automotive applications requiring specific change control, such as AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities.

Applications

  • Switching Applications: The BC847BFAQ-7B is well-suited for switching applications due to its high current gain and low saturation voltage.
  • Audio Frequency (AF) Amplifier Applications: Its high DC current gain and low noise characteristics make it ideal for AF amplifier circuits.
  • Automotive Electronics: Given its compliance with automotive standards, it is suitable for various automotive electronic systems.
  • General Purpose Amplification: It can be used in a wide range of general-purpose amplification circuits where high reliability and compact size are required.

Q & A

  1. What is the package type of the BC847BFAQ-7B transistor?

    The BC847BFAQ-7B transistor is packaged in the SOT363 format.

  2. What are the maximum collector-base and collector-emitter voltages for the BC847BFAQ-7B?

    The maximum collector-base voltage (VCBO) is 50V, and the maximum collector-emitter voltage (VCEO) is 45V.

  3. What is the maximum collector current for the BC847BFAQ-7B?

    The maximum collector current (IC) is 100mA, with a peak collector current (ICM) of 200mA.

  4. Is the BC847BFAQ-7B RoHS compliant?

    Yes, the BC847BFAQ-7B is fully RoHS compliant and lead-free.

  5. What are the typical applications of the BC847BFAQ-7B transistor?

    The BC847BFAQ-7B is typically used in switching applications, AF amplifier applications, automotive electronics, and general-purpose amplification circuits.

  6. What is the thermal resistance, junction to ambient, for the BC847BFAQ-7B?

    The thermal resistance, junction to ambient (RθJA), is 625°C/W.

  7. What is the operating and storage temperature range for the BC847BFAQ-7B?

    The operating and storage temperature range is -55°C to +150°C.

  8. Is the BC847BFAQ-7B suitable for automotive applications?

    Yes, it is suitable for automotive applications requiring specific change control, such as AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities.

  9. What is the DC current gain of the BC847BFAQ-7B transistor?

    The DC current gain (hFE) ranges from 200 to 450 at VCE = 5.0V and IC = 2.0mA.

  10. What is the collector-emitter saturation voltage for the BC847BFAQ-7B?

    The collector-emitter saturation voltage (VCE(sat)) ranges from 100 to 400 mV under specified conditions.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:435 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XFDFN
Supplier Device Package:X2-DFN0806-3
0 Remaining View Similar

In Stock

$0.07
90

Please send RFQ , we will respond immediately.

Related Product By Categories

PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
BC857BW_R1_00001
BC857BW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC846B215
BC846B215
NXP USA Inc.
0.1A, 65V, NPN, TO 236AB
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BU806 PBFREE
BU806 PBFREE
Central Semiconductor Corp
TRANS NPN 400V 8A TO220-3
BC 817-16 E6327
BC 817-16 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
SS8050-D-AP
SS8050-D-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92

Related Product By Brand

BAS21DWA-7
BAS21DWA-7
Diodes Incorporated
DIODE SW DL 2500V 100MA SOT353
MURS140-13-F
MURS140-13-F
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAT760Q-7
BAT760Q-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A SOD323
BZX84C2V7T-7-F
BZX84C2V7T-7-F
Diodes Incorporated
DIODE ZENER 2.7V 150MW SOT523
BZT52HC6V8WF-7
BZT52HC6V8WF-7
Diodes Incorporated
DIODE ZENER 6.8V 375MW SOD123F
BZX84B4V3Q-7-F
BZX84B4V3Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BCP5616QTA
BCP5616QTA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BC857BFZ-7B
BC857BFZ-7B
Diodes Incorporated
TRANS PNP 45V 0.1A 3DFN
BC847BLD-7
BC847BLD-7
Diodes Incorporated
TRANS NPN 45V 0.2A SOT23-3
BSS84V-7
BSS84V-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SOT-563
BSS123-7-F
BSS123-7-F
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
LM2903AQTH-13
LM2903AQTH-13
Diodes Incorporated
IC COMPARATOR DUAL DIFF TSSOP-8