2N7002-7-F-79
  • Share:

Diodes Incorporated 2N7002-7-F-79

Manufacturer No:
2N7002-7-F-79
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-7-F-79, produced by Diodes Incorporated, is a part of the 2N7002 series of N-Channel Enhancement Mode MOSFETs. This component is designed to offer high efficiency and superior switching performance, making it ideal for various power management and control applications. It is packaged in a small SOT-23-3 surface mount package, which is RoHS compliant and lead-free.

Key Specifications

Attribute Value Unit
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (Rds(on)) Max 7.5 Ω
Rated Power Dissipation 300 mW
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Continuous Drain Current (Vgs = 10V, TA = +25°C) 170 mA
Maximum Continuous Body Diode Forward Current 0.2 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) 800 mA
Operating and Storage Temperature Range -55 to +150 °C
Gate Threshold Voltage (Vgs(th)) 1.0 to 2.5 V
Input Capacitance (Ciss) 22 to 50 pF

Key Features

  • Low On-Resistance (Rds(on))
  • Low Gate Threshold Voltage (Vgs(th))
  • Low Input Capacitance (Ciss)
  • Fast Switching Speed
  • Small Surface Mount Package (SOT-23-3)
  • Operating and Storage Temperature Range: -55 to +150 °C
  • Totally Lead-Free and Fully RoHS Compliant
  • Halogen and Antimony Free

Applications

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the drain-to-source voltage (Vdss) of the 2N7002-7-F-79 MOSFET?

    The drain-to-source voltage (Vdss) is 60 V.

  2. What is the maximum drain-source on resistance (Rds(on)) of this MOSFET?

    The maximum drain-source on resistance (Rds(on)) is 7.5 Ω.

  3. What is the rated power dissipation of the 2N7002-7-F-79?

    The rated power dissipation is 300 mW.

  4. In what package is the 2N7002-7-F-79 available?

    The 2N7002-7-F-79 is available in a SOT-23-3 package.

  5. What is the mounting method for this MOSFET?

    The mounting method is surface mount.

  6. What is the continuous drain current at TA = +25°C with Vgs = 10V?

    The continuous drain current is 170 mA.

  7. What is the maximum continuous body diode forward current?

    The maximum continuous body diode forward current is 0.2 A.

  8. What is the operating and storage temperature range for this MOSFET?

    The operating and storage temperature range is -55 to +150 °C.

  9. Is the 2N7002-7-F-79 RoHS compliant?

    Yes, the 2N7002-7-F-79 is totally lead-free and fully RoHS compliant.

  10. What are some common applications for the 2N7002-7-F-79?

    Common applications include motor control and power management functions.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
166

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAS70-04-7-F
BAS70-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
BAS21T-7-F
BAS21T-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
BZX84C6V2TS-7-F
BZX84C6V2TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 6.2V SOT363
BZX84C22Q-7-F
BZX84C22Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C7V5T-7-F
BZX84C7V5T-7-F
Diodes Incorporated
DIODE ZENER 7.5V 150MW SOT523
BZX84C5V6TA
BZX84C5V6TA
Diodes Incorporated
DIODE ZENER 5.6V 350MW SOT23-3
BZX84C2V4-7-G
BZX84C2V4-7-G
Diodes Incorporated
DIODE ZENER
BZX84C4V3-7-G
BZX84C4V3-7-G
Diodes Incorporated
DIODE ZENER
BZX84C51Q-13-F
BZX84C51Q-13-F
Diodes Incorporated
DIODE ZENER 51V 300MW SOT23
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
2N7002E-7-F
2N7002E-7-F
Diodes Incorporated
MOSFET N-CH 60V 250MA SOT23-3
74LVC1G08FZ4-7
74LVC1G08FZ4-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1410-6