BAV21WS-E3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAV21WS-E3-18

Manufacturer No:
BAV21WS-E3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21WS-E3-18 is a general-purpose small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for various applications requiring high reliability and performance. It is part of the BAV21 series, which is known for its robust specifications and versatility in different electronic circuits.

The BAV21WS-E3-18 is AEC-Q101 qualified and ROHS compliant, making it suitable for automotive, industrial, and consumer electronics. It features a SOD-323 package, which is compact and suitable for surface mount applications.

Key Specifications

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA
Current - Average Rectified (Io) 250 mA
Repetitive Peak Reverse Voltage (VRRM) 250 V
Repetitive Peak Forward Current (IFRM) 625 mA
Surge Forward Current (IFSM) 1 A
Reverse Recovery Time (trr) 50 ns
Package / Case SOD-323
Operating Temperature - Junction -65 to +150 °C
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 100 nA @ 150 V
Capacitance @ Vr, F 1.5 pF @ 0V, 1MHz

Key Features

  • AEC-Q101 Qualified and ROHS Compliant: Suitable for automotive and other applications requiring high reliability and environmental compliance.
  • High Voltage and Current Ratings: Maximum DC reverse voltage of 200 V and average rectified current of 250 mA.
  • Fast Recovery Time: Reverse recovery time of 50 ns, making it suitable for high-speed switching applications.
  • Low Forward Voltage Drop: Maximum forward voltage of 1 V at 100 mA, reducing power losses in the circuit.
  • Compact Package: SOD-323 package for surface mount applications, offering space efficiency.
  • Wide Operating Temperature Range: Junction temperature range from -65°C to +150°C, ensuring reliability in various environmental conditions.

Applications

  • General Purpose Switching and Rectification: Suitable for a wide range of applications requiring small signal switching and rectification.
  • Automotive Electronics: AEC-Q101 qualification makes it ideal for use in automotive systems.
  • Industrial and Consumer Electronics: Used in various industrial and consumer electronic devices where high reliability and performance are required.
  • Polarity Protection and Signal Switching: Can be used for polarity protection and signal switching in electronic circuits.

Q & A

  1. What is the maximum DC reverse voltage of the BAV21WS-E3-18 diode?

    The maximum DC reverse voltage is 200 V.

  2. What is the average rectified current rating of the BAV21WS-E3-18?

    The average rectified current rating is 250 mA.

  3. What is the reverse recovery time of the BAV21WS-E3-18 diode?

    The reverse recovery time is 50 ns.

  4. What package type does the BAV21WS-E3-18 come in?

    The diode comes in a SOD-323 package.

  5. Is the BAV21WS-E3-18 AEC-Q101 qualified and ROHS compliant?

    Yes, it is both AEC-Q101 qualified and ROHS compliant.

  6. What is the maximum forward voltage drop of the BAV21WS-E3-18 at 100 mA?

    The maximum forward voltage drop at 100 mA is 1 V.

  7. What is the surge forward current rating of the BAV21WS-E3-18?

    The surge forward current rating is 1 A.

  8. What is the operating temperature range of the BAV21WS-E3-18?

    The operating temperature range is from -65°C to +150°C.

  9. What is the reverse leakage current at 150 V for the BAV21WS-E3-18?

    The reverse leakage current at 150 V is 100 nA.

  10. What is the capacitance of the BAV21WS-E3-18 at 0 V and 1 MHz?

    The capacitance is 1.5 pF at 0 V and 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.32
1,271

Please send RFQ , we will respond immediately.

Same Series
BAV21WS-HE3-18
BAV21WS-HE3-18
DIODE GEN PURP 200V 250MA SOD323
BAV21WS-E3-08
BAV21WS-E3-08
DIODE GEN PURP 200V 250MA SOD323
BAV19WS-E3-08
BAV19WS-E3-08
DIODE GEN PURP 100V 250MA SOD323
BAV19WS-HE3-08
BAV19WS-HE3-08
DIODE GEN PURP 100V 250MA SOD323
BAV20WS-E3-08
BAV20WS-E3-08
DIODE GEN PURP 150V 250MA SOD323
BAV19WS-E3-18
BAV19WS-E3-18
DIODE GEN PURP 100V 250MA SOD323
BAV20WS-E3-18
BAV20WS-E3-18
DIODE GEN PURP 150V 250MA SOD323
BAV21WS-E3-18
BAV21WS-E3-18
DIODE GEN PURP 200V 250MA SOD323
BAV20WS-HE3-08
BAV20WS-HE3-08
DIODE GEN PURP 150V 250MA SOD323
BAV19WS-HE3-18
BAV19WS-HE3-18
DIODE GEN PURP 100V 250MA SOD323
BAV20WS-HE3-18
BAV20WS-HE3-18
DIODE GEN PURP 150V 250MA SOD323

Similar Products

Part Number BAV21WS-E3-18 BAV21WS-HE3-18 BAV21WS-G3-18 BAV20WS-E3-18 BAV21W-E3-18 BAV21WS-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 150 V 200 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1 V @ 100 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 150 V 100 nA @ 200 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SOD-123 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 SOD-323 SOD-323 SOD-123 SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 175°C (Max) 150°C (Max)

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T68A-E3/9AT
SM15T68A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T36CAHE3/9AT
SM15T36CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T39CAHE3/5B
SM6T39CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T68AHE3_A/H
SM15T68AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T220CAHM3/I
SM6T220CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAS70-05-G3-18
BAS70-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
MBR10100-E3/4W
MBR10100-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX84C8V2-HE3-18
BZX84C8V2-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 300MW SOT23-3