BAV21WS-HE3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAV21WS-HE3-08

Manufacturer No:
BAV21WS-HE3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21WS-HE3-08 is a high-voltage small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose applications and is particularly suited for rectification, polarity protection, and signal switching. It is available in a SOD-323 package and is RoHS-compliant and AEC-Q101 qualified, making it suitable for automotive and industrial environments.

Key Specifications

Parameter Value Unit
Continuous Reverse Voltage (VR) 200 V
Repetitive Peak Reverse Voltage (VRRM) 250 V
Forward Continuous Current (IF) 250 mA
Rectified Current (Average) Half Wave Rectification with Resistive Load (IF(AV)) 200 mA
Repetitive Peak Forward Current (IFRM) 625 mA
Surge Forward Current (IFSM) 1 A
Power Dissipation (Ptot) 200 mW
Thermal Resistance Junction to Ambient Air (RthJA) 625 K/W
Thermal Resistance Junction to Lead (RthJL) 450 K/W
Junction Temperature (Tj) 150 °C
Storage Temperature Range (Tstg) -65 to +150 °C
Operating Temperature Range (Top) -65 to +150 °C
Forward Voltage (VF) at IF = 100 mA 1 V
Reverse Leakage Current (IR) at VR = 200 V, TJ = 25 °C 100 nA
Reverse Recovery Time (trr) 50 ns
Diode Capacitance (CD) at VR = 0, f = 1 MHz 1.5 pF

Key Features

  • High Voltage Capability: The BAV21WS-HE3-08 can handle a continuous reverse voltage of 200 V and a repetitive peak reverse voltage of 250 V, making it suitable for high-voltage applications.
  • Low Forward Voltage: With a forward voltage of 1 V at 100 mA, this diode minimizes power loss in forward conduction.
  • Fast Switching: The diode features a fast reverse recovery time of 50 ns, which is beneficial for high-frequency applications.
  • Low Leakage Current: It has a low reverse leakage current of 100 nA at 25 °C, reducing standby power consumption.
  • Compact Package: Available in the SOD-323 package, this diode is ideal for space-constrained designs.
  • RoHS Compliant and AEC-Q101 Qualified: Ensures compliance with environmental regulations and meets stringent automotive standards.

Applications

  • Rectification and Polarity Protection: Suitable for general-purpose rectification and polarity protection in various electronic circuits.
  • Signal Switching: Ideal for signal switching applications due to its fast switching characteristics.
  • Automotive Systems: AEC-Q101 qualification makes it suitable for use in automotive systems, including power management and protection circuits.
  • Industrial and Consumer Electronics: Can be used in a wide range of industrial and consumer electronic devices requiring high-voltage diodes.

Q & A

  1. What is the continuous reverse voltage rating of the BAV21WS-HE3-08?

    The continuous reverse voltage rating is 200 V.

  2. What is the repetitive peak reverse voltage rating of the BAV21WS-HE3-08?

    The repetitive peak reverse voltage rating is 250 V.

  3. What is the forward continuous current rating of the BAV21WS-HE3-08?

    The forward continuous current rating is 250 mA.

  4. What is the reverse recovery time of the BAV21WS-HE3-08?

    The reverse recovery time is 50 ns.

  5. Is the BAV21WS-HE3-08 RoHS compliant and AEC-Q101 qualified?

    Yes, it is both RoHS compliant and AEC-Q101 qualified.

  6. What is the typical forward voltage of the BAV21WS-HE3-08 at 100 mA?

    The typical forward voltage at 100 mA is 1 V.

  7. What is the thermal resistance junction to ambient air (RthJA) of the BAV21WS-HE3-08?

    The thermal resistance junction to ambient air (RthJA) is 625 K/W.

  8. What is the storage temperature range of the BAV21WS-HE3-08?

    The storage temperature range is -65 to +150 °C.

  9. What is the operating temperature range of the BAV21WS-HE3-08?

    The operating temperature range is -65 to +150 °C.

  10. In what package is the BAV21WS-HE3-08 available?

    The BAV21WS-HE3-08 is available in the SOD-323 package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.33
2,027

Please send RFQ , we will respond immediately.

Same Series
BAV21WS-HE3-18
BAV21WS-HE3-18
DIODE GEN PURP 200V 250MA SOD323
BAV21WS-E3-08
BAV21WS-E3-08
DIODE GEN PURP 200V 250MA SOD323
BAV19WS-E3-08
BAV19WS-E3-08
DIODE GEN PURP 100V 250MA SOD323
BAV19WS-HE3-08
BAV19WS-HE3-08
DIODE GEN PURP 100V 250MA SOD323
BAV20WS-E3-08
BAV20WS-E3-08
DIODE GEN PURP 150V 250MA SOD323
BAV19WS-E3-18
BAV19WS-E3-18
DIODE GEN PURP 100V 250MA SOD323
BAV20WS-E3-18
BAV20WS-E3-18
DIODE GEN PURP 150V 250MA SOD323
BAV21WS-E3-18
BAV21WS-E3-18
DIODE GEN PURP 200V 250MA SOD323
BAV20WS-HE3-08
BAV20WS-HE3-08
DIODE GEN PURP 150V 250MA SOD323
BAV19WS-HE3-18
BAV19WS-HE3-18
DIODE GEN PURP 100V 250MA SOD323
BAV20WS-HE3-18
BAV20WS-HE3-18
DIODE GEN PURP 150V 250MA SOD323

Similar Products

Part Number BAV21WS-HE3-08 BAV21WS-HE3-18 BAV20WS-HE3-08 BAV21W-HE3-08 BAV21WS-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V 200 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1 V @ 100 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 150 V 100 nA @ 200 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SOD-123 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 SOD-323 SOD-123 SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 175°C (Max) 150°C (Max)

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

SM15T36CA-E3/57T
SM15T36CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T24CA-M3/5B
SM6T24CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM15T6V8AHM3/H
SM15T6V8AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
BAT54-E3-18
BAT54-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
SS14HE3_B/I
SS14HE3_B/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX84C24-E3-18
BZX84C24-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 300MW SOT23-3
BZX84C56-E3-18
BZX84C56-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 56V 300MW SOT23-3
BZX84C3V3-HE3-18
BZX84C3V3-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX84B3V3-HE3-08
BZX84B3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX84C51-G3-18
BZX84C51-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX384B15-E3-18
BZX384B15-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323