BAS86-M-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS86-M-18

Manufacturer No:
BAS86-M-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 50V 200MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS86-M-18 is a small-signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is known for its low forward voltage and high breakdown voltage, making it suitable for a variety of applications requiring high-speed switching and low voltage drop. The device is encapsulated in a hermetically sealed SOD-80 (MiniMELF) package, which is compact and suitable for surface mount technology (SMT).

Key Specifications

Parameter Value Unit
Voltage - Forward (Vf) (Max) @ If 900 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max) 50 V
Technology Schottky
Package / Case DO-213AC, MINI-MELF, SOD-80
Current - Average Rectified (Io) 200 mA
Reverse Recovery Time (trr) 5 ns
Operating Temperature - Junction 125°C Max
Current - Reverse Leakage @ Vr 5 µA @ 40 V
Capacitance @ Vr, F 8 pF @ 1 V, 1 MHz

Key Features

  • Low Forward Voltage: The BAS86-M-18 features a low forward voltage of 900 mV at 100 mA, which reduces power losses in switching applications.
  • High Breakdown Voltage: With a maximum DC reverse voltage of 50 V, this diode provides robust protection against reverse voltage conditions.
  • Guard-Ring Protection: The device includes an integrated guard ring for stress protection, enhancing its reliability against electrostatic discharges and other voltage stresses.
  • Hermetically Sealed Package: Encapsulated in a hermetically sealed SOD-80 (MiniMELF) package, ensuring reliability and durability in various environmental conditions.
  • Ultra High-Speed Switching: The diode is capable of ultra high-speed switching with a reverse recovery time of 5 ns, making it suitable for high-frequency applications.
  • Suitable for SMT: The surface-mount package is designed for automatic placement and can withstand immersion soldering, facilitating efficient manufacturing processes.

Applications

  • High-Speed Switching Circuits: The BAS86-M-18 is ideal for applications requiring fast switching times and low forward voltage drop, such as in high-speed digital circuits and switching power supplies.
  • Voltage Clamping and Protection Circuits: Its high breakdown voltage and guard-ring protection make it suitable for voltage clamping and protection circuits in various electronic systems.
  • Automotive and Industrial Applications: The diode is used in automotive and industrial applications where reliability and high performance are critical.
  • Power Management and Computing: It is also used in power management circuits and computing applications where low power loss and high-speed switching are essential.

Q & A

  1. What is the maximum forward voltage of the BAS86-M-18?

    The maximum forward voltage of the BAS86-M-18 is 900 mV at 100 mA.

  2. What is the maximum DC reverse voltage of the BAS86-M-18?

    The maximum DC reverse voltage of the BAS86-M-18 is 50 V.

  3. What type of package does the BAS86-M-18 use?

    The BAS86-M-18 is encapsulated in a hermetically sealed SOD-80 (MiniMELF) package.

  4. Is the BAS86-M-18 suitable for surface mount technology (SMT)?
  5. What is the reverse recovery time of the BAS86-M-18?
  6. What are some common applications of the BAS86-M-18?
  7. Does the BAS86-M-18 have any built-in protection features?
  8. What is the operating temperature range of the BAS86-M-18?
  9. Is the BAS86-M-18 RoHS compliant?
  10. What is the average rectified current (Io) of the BAS86-M-18?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:900 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:5 µA @ 40 V
Capacitance @ Vr, F:8pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:SOD-80 MiniMELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.43
1,648

Please send RFQ , we will respond immediately.

Same Series
BAS86-M-08
BAS86-M-08
DIODE SCHOTTKY 50V 200MA SOD80

Similar Products

Part Number BAS86-M-18 BAS85-M-18 BAS86-M-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 50 V 30 V 50 V
Current - Average Rectified (Io) 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 900 mV @ 100 mA 800 mV @ 100 mA 900 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns - 5 ns
Current - Reverse Leakage @ Vr 5 µA @ 40 V 2 µA @ 25 V 5 µA @ 40 V
Capacitance @ Vr, F 8pF @ 1V, 1MHz 10pF @ 1V, 1MHz 8pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80
Supplier Device Package SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

SMBJ5.0CA-E3/5B
SMBJ5.0CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
SM6T18CA-M3/5B
SM6T18CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T12A-E3/5B
SM6T12A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T15CAHE3_A/H
SM6T15CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T200A-M3/57T
SM15T200A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
BYQ28EF-100-E3/45
BYQ28EF-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A ITO220AB
MUR420-M3/54
MUR420-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
BZX55C8V2-TAP
BZX55C8V2-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 500MW DO35
BZX84C18-HE3-08
BZX84C18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX384B15-E3-18
BZX384B15-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX384B16-G3-18
BZX384B16-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323