Overview
The BAS85-M-18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is known for its low forward voltage drop and high breakdown voltage, making it suitable for various high-speed switching applications. The device is encapsulated in a hermetically sealed glass SOD80C surface-mounted device (SMD) package, which is designed for automatic placement and can withstand immersion soldering.
Key Specifications
| Parameter | Test Condition | Symbol | Value | Unit |
|---|---|---|---|---|
| Continuous Reverse Voltage | Tamb = 25 °C | VR | 30 | V |
| Forward Continuous Current | Tamb = 25 °C | IF | 200 | mA |
| Peak Forward Current | tp < 1 s | IFM | 300 | mA |
| Surge Forward Current | tp < 1 s | IFSM | 600 | mA |
| Power Dissipation | Tamb = 65 °C | Ptot | 200 | mW |
| Thermal Resistance Junction to Ambient Air | Tamb = 25 °C | RthJA | 430 | K/W |
| Junction Temperature | Tj | 125 | °C | |
| Storage Temperature Range | Tstg | -55 to +150 | °C | |
| Operating Temperature Range | Top | -55 to +125 | °C | |
| Forward Voltage | Pulse test tp < 300 μs, IF = 0.1 mA | VF | 240 | mV |
| Forward Voltage | Pulse test tp < 300 μs, IF = 1 mA | VF | 320 | mV |
| Reverse Recovery Time | IF = 10 mA, IR = 10 mA, iR = 1 mA | trr | 5 | ns |
Key Features
- Low Forward Voltage: The BAS85-M-18 features a very low forward voltage drop, making it ideal for applications where low voltage losses are critical.
- High Breakdown Voltage: The diode has a high breakdown voltage of 30 V, ensuring robust performance under various operating conditions.
- Guard-Ring Protection: The device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
- Hermetically Sealed Glass SMD Package: Encapsulated in a SOD80C package, the diode is suitable for automatic placement and can withstand immersion soldering.
Applications
- Ultra High-Speed Switching: The low forward voltage and fast switching times make the BAS85-M-18 suitable for high-speed switching applications.
- Voltage Clamping: The diode can be used in voltage clamping circuits to protect against voltage spikes and surges.
- Protection Circuits: It is used in protection circuits to safeguard against overvoltage and other forms of electrical stress.
- Blocking Diodes: The BAS85-M-18 can be used as blocking diodes in various electronic circuits to prevent backflow of current.
Q & A
- What is the continuous reverse voltage rating of the BAS85-M-18?
The continuous reverse voltage rating is 30 V.
- What is the forward continuous current rating of the BAS85-M-18?
The forward continuous current rating is 200 mA.
- What is the typical forward voltage drop of the BAS85-M-18 at 1 mA?
The typical forward voltage drop at 1 mA is 320 mV.
- What is the reverse recovery time of the BAS85-M-18?
The reverse recovery time is 5 ns.
- What type of package does the BAS85-M-18 come in?
The BAS85-M-18 comes in a hermetically sealed glass SOD80C surface-mounted device (SMD) package.
- Is the BAS85-M-18 protected against electrostatic discharges?
Yes, the device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
- What are the typical applications of the BAS85-M-18?
The BAS85-M-18 is typically used in ultra high-speed switching, voltage clamping, protection circuits, and as blocking diodes.
- What is the operating temperature range of the BAS85-M-18?
The operating temperature range is -55 to +125 °C.
- What is the storage temperature range of the BAS85-M-18?
The storage temperature range is -55 to +150 °C.
- Can the BAS85-M-18 withstand immersion soldering?
Yes, the device can withstand immersion soldering due to its hermetically sealed glass SMD package.
