BAS40LTH-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS40LTH-G3-08

Manufacturer No:
BAS40LTH-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SWITCHING DIODE GENPURP DFN1006-
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40LTH-G3-08 is a high-performance small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This device is designed for high-temperature and mission-critical applications, featuring a maximum junction temperature of 175°C. It is packaged in a leadless ultra-small DFN1006-2A package, which enhances power dissipation compared to traditional SOT-23 packages. The diode is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Reverse Voltage-VR40V
Forward Continuous Currenton FR-4 board with recommended soldering footprintIF200mA
Non-repetitive Peak Forward CurrentTJ = 25°C, tp = 10 msIFSM500mA
Power Dissipationon FR-4 board with recommended soldering footprintPtot350mW
Thermal Resistance Junction to Ambient Airaccording to JEDEC® 51-3 on FR-4 board with recommended soldering footprintRthJA420K/W
Thermal Resistance Junction to Lead-RthJL100K/W
Maximum Junction Temperature-Tj max.175°C
Storage Temperature Range-Tstg-55 to +175°C
Operating Temperature Range-Top-55 to +175°C

Key Features

  • High-temperature operation with a maximum junction temperature of 175°C, making it suitable for mission-critical applications.
  • Leadless ultra-small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm) for enhanced power dissipation.
  • Protected by a PN junction guard against electrostatic discharges.
  • Surface-mounted device (SMD) with visible and sidewall plated/wettable flanks for easy soldering inspection.
  • AEC-Q101 qualified for automotive and other demanding environments.

Applications

The BAS40LTH-G3-08 is ideal for various high-temperature and high-reliability applications, including:

  • Automotive systems, particularly those requiring AEC-Q101 qualification.
  • Industrial control systems and power supplies.
  • High-frequency switching circuits.
  • Mission-critical electronic systems where reliability and high temperature tolerance are essential.

Q & A

  1. What is the maximum junction temperature of the BAS40LTH-G3-08?
    The maximum junction temperature is 175°C.
  2. What is the package type of the BAS40LTH-G3-08?
    The package type is leadless ultra-small DFN1006-2A.
  3. Is the BAS40LTH-G3-08 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the forward continuous current rating of the BAS40LTH-G3-08?
    The forward continuous current rating is 200 mA.
  5. What is the reverse voltage rating of the BAS40LTH-G3-08?
    The reverse voltage rating is 40 V.
  6. How is the power dissipation of the BAS40LTH-G3-08 compared to SOT-23 packages?
    The power dissipation is better than SOT-23 packages due to the DFN1006-2A package.
  7. What is the thermal resistance junction to ambient air for the BAS40LTH-G3-08?
    The thermal resistance junction to ambient air is 420 K/W.
  8. What is the storage temperature range for the BAS40LTH-G3-08?
    The storage temperature range is -55 to +175°C.
  9. What type of protection does the BAS40LTH-G3-08 have against electrostatic discharges?
    The device is protected by a PN junction guard against electrostatic discharges.
  10. How can the soldering of the BAS40LTH-G3-08 be inspected?
    Soldering can be checked by standard visual inspection; no X-ray inspection is necessary.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 40 V
Capacitance @ Vr, F:2.9pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:175°C
0 Remaining View Similar

In Stock

$0.29
2,603

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP

Similar Products

Part Number BAS40LTH-G3-08 BAS40LTH-HG3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 10 µA @ 40 V 10 µA @ 40 V
Capacitance @ Vr, F 2.9pF @ 0V, 1MHz 2.9pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric)
Supplier Device Package DFN1006-2A DFN1006-2A
Operating Temperature - Junction 175°C 175°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA

Related Product By Brand

SM6T27AHM3_A/I
SM6T27AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
SM15T33A-M3/9AT
SM15T33A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM15T18AHM3_A/I
SM15T18AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM15T6V8CAHE3_A/H
SM15T6V8CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM15T18CAHM3/I
SM15T18CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
BAT54A-HE3-08
BAT54A-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
1N4002GPEHE3/73
1N4002GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
1N4004GPHE3/73
1N4004GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BAS40-02V-V-G-08
BAS40-02V-V-G-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 120MA SOD523
1N4937GPEHE3/91
1N4937GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BZX84C10-E3-08
BZX84C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX384C13-HE3-18
BZX384C13-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 200MW SOD323