BAS40LTH-G3-08
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Vishay General Semiconductor - Diodes Division BAS40LTH-G3-08

Manufacturer No:
BAS40LTH-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SWITCHING DIODE GENPURP DFN1006-
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40LTH-G3-08 is a high-performance small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This device is designed for high-temperature and mission-critical applications, featuring a maximum junction temperature of 175°C. It is packaged in a leadless ultra-small DFN1006-2A package, which enhances power dissipation compared to traditional SOT-23 packages. The diode is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Reverse Voltage-VR40V
Forward Continuous Currenton FR-4 board with recommended soldering footprintIF200mA
Non-repetitive Peak Forward CurrentTJ = 25°C, tp = 10 msIFSM500mA
Power Dissipationon FR-4 board with recommended soldering footprintPtot350mW
Thermal Resistance Junction to Ambient Airaccording to JEDEC® 51-3 on FR-4 board with recommended soldering footprintRthJA420K/W
Thermal Resistance Junction to Lead-RthJL100K/W
Maximum Junction Temperature-Tj max.175°C
Storage Temperature Range-Tstg-55 to +175°C
Operating Temperature Range-Top-55 to +175°C

Key Features

  • High-temperature operation with a maximum junction temperature of 175°C, making it suitable for mission-critical applications.
  • Leadless ultra-small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm) for enhanced power dissipation.
  • Protected by a PN junction guard against electrostatic discharges.
  • Surface-mounted device (SMD) with visible and sidewall plated/wettable flanks for easy soldering inspection.
  • AEC-Q101 qualified for automotive and other demanding environments.

Applications

The BAS40LTH-G3-08 is ideal for various high-temperature and high-reliability applications, including:

  • Automotive systems, particularly those requiring AEC-Q101 qualification.
  • Industrial control systems and power supplies.
  • High-frequency switching circuits.
  • Mission-critical electronic systems where reliability and high temperature tolerance are essential.

Q & A

  1. What is the maximum junction temperature of the BAS40LTH-G3-08?
    The maximum junction temperature is 175°C.
  2. What is the package type of the BAS40LTH-G3-08?
    The package type is leadless ultra-small DFN1006-2A.
  3. Is the BAS40LTH-G3-08 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the forward continuous current rating of the BAS40LTH-G3-08?
    The forward continuous current rating is 200 mA.
  5. What is the reverse voltage rating of the BAS40LTH-G3-08?
    The reverse voltage rating is 40 V.
  6. How is the power dissipation of the BAS40LTH-G3-08 compared to SOT-23 packages?
    The power dissipation is better than SOT-23 packages due to the DFN1006-2A package.
  7. What is the thermal resistance junction to ambient air for the BAS40LTH-G3-08?
    The thermal resistance junction to ambient air is 420 K/W.
  8. What is the storage temperature range for the BAS40LTH-G3-08?
    The storage temperature range is -55 to +175°C.
  9. What type of protection does the BAS40LTH-G3-08 have against electrostatic discharges?
    The device is protected by a PN junction guard against electrostatic discharges.
  10. How can the soldering of the BAS40LTH-G3-08 be inspected?
    Soldering can be checked by standard visual inspection; no X-ray inspection is necessary.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 40 V
Capacitance @ Vr, F:2.9pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:175°C
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Similar Products

Part Number BAS40LTH-G3-08 BAS40LTH-HG3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 10 µA @ 40 V 10 µA @ 40 V
Capacitance @ Vr, F 2.9pF @ 0V, 1MHz 2.9pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric)
Supplier Device Package DFN1006-2A DFN1006-2A
Operating Temperature - Junction 175°C 175°C

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