BAS40LTH-HG3-08
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Vishay General Semiconductor - Diodes Division BAS40LTH-HG3-08

Manufacturer No:
BAS40LTH-HG3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SWITCHING DIODE GENPURP DFN1006-
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40LTH-HG3-08 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring low turn-on voltage and fast switching times. It is packaged in a leadless ultra small DFN1006-2A package, making it ideal for space-constrained designs.

Key Specifications

ParameterValue
Voltage Rating (V)40 V
Current Rating (mA)200 mA
Forward Voltage Drop (V)1 V @ 40 mA
Package TypeDFN1006-2A (leadless)
Protection FeaturesP-N junction guard ring for electrostatic discharge protection

Key Features

  • Very low turn-on voltage for efficient operation
  • Fast switching times for high-speed applications
  • Leadless ultra small DFN1006-2A package for compact designs
  • P-N junction guard ring for protection against excessive voltage and electrostatic discharges

Applications

The BAS40LTH-HG3-08 is suitable for a variety of applications requiring low voltage drop and fast switching, such as:

  • High-frequency switching circuits
  • Power management systems
  • Communication devices
  • Consumer electronics

Q & A

  1. What is the voltage rating of the BAS40LTH-HG3-08? The voltage rating is 40 V.
  2. What is the current rating of the BAS40LTH-HG3-08? The current rating is 200 mA.
  3. What is the forward voltage drop of the BAS40LTH-HG3-08? The forward voltage drop is 1 V at 40 mA.
  4. What type of package does the BAS40LTH-HG3-08 use? It uses a leadless ultra small DFN1006-2A package.
  5. Does the BAS40LTH-HG3-08 have any protection features? Yes, it has a P-N junction guard ring for protection against excessive voltage and electrostatic discharges.
  6. What are some typical applications for the BAS40LTH-HG3-08? Typical applications include high-frequency switching circuits, power management systems, communication devices, and consumer electronics.
  7. Why is the BAS40LTH-HG3-08 preferred in high-speed applications? It is preferred due to its very low turn-on voltage and fast switching times.
  8. Is the BAS40LTH-HG3-08 RoHS compliant? Yes, it is RoHS compliant.
  9. Where can I find the datasheet for the BAS40LTH-HG3-08? The datasheet can be downloaded from various distributor websites such as Digi-Key, Mouser, or JLCPCB.
  10. What are the benefits of using a leadless package like DFN1006-2A? The benefits include reduced space requirements and improved thermal performance.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 40 V
Capacitance @ Vr, F:2.9pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:175°C
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$0.29
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Similar Products

Part Number BAS40LTH-HG3-08 BAS40LTH-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 10 µA @ 40 V 10 µA @ 40 V
Capacitance @ Vr, F 2.9pF @ 0V, 1MHz 2.9pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric)
Supplier Device Package DFN1006-2A DFN1006-2A
Operating Temperature - Junction 175°C 175°C

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