BAS40L-G3-08
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Vishay General Semiconductor - Diodes Division BAS40L-G3-08

Manufacturer No:
BAS40L-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SCHOTTKY DIODE DFN1006-2A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40L-G3-08, manufactured by Vishay General Semiconductor - Diodes Division, is a small signal Schottky diode array. This component features a pair of series-connected diodes housed in a compact surface mount package, specifically the DFN1006-2A package. It is designed to handle a maximum reverse voltage of 40 V and a forward current of up to 200 mA. The diode array is known for its fast switching characteristics and low turn-on voltage, making it suitable for a variety of applications requiring efficient and reliable diode performance.

Key Specifications

ParameterValueUnit
Reverse Voltage (VR)40V
Forward Current (IF)200mA
Non-repetitive Peak Forward Current (IFSM)500mA (tp = 10 ms, Tj = 25 °C)
Power Dissipation (Ptot)300mW (on FR-4 board with recommended soldering footprint)
Thermal Resistance Junction to Ambient (RthJA)420K/W (on FR-4 board with recommended soldering footprint)
Maximum Junction Temperature (Tj max.)150°C
Storage Temperature Range (Tstg)-55 to +150°C
Operating Temperature Range (Top)-55 to +150°C
Forward Voltage Drop (VF) at IF = 40 mA1V
Reverse Recovery Time5ns

Key Features

  • Compact surface mount package (DFN1006-2A)
  • Low turn-on voltage and fast switching characteristics
  • Protected by a PN junction guard against electrostatic discharges
  • Surface-mounted device (SMD) with visible and sidewall plated/wettable flanks for easy soldering inspection
  • AEC-Q101 qualified for automotive applications
  • High power dissipation compared to SOT-23 packages

Applications

The BAS40L-G3-08 is suitable for a wide range of applications, including:

  • Automotive systems (AEC-Q101 qualified)
  • Consumer electronics requiring low voltage and high current handling
  • Industrial control systems
  • Communication devices
  • Power management circuits

Q & A

  1. What is the maximum reverse voltage of the BAS40L-G3-08?
    The maximum reverse voltage is 40 V.
  2. What is the forward current rating of the BAS40L-G3-08?
    The forward current rating is up to 200 mA.
  3. What is the package type of the BAS40L-G3-08?
    The package type is DFN1006-2A.
  4. Is the BAS40L-G3-08 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified for automotive applications.
  5. What is the maximum junction temperature of the BAS40L-G3-08?
    The maximum junction temperature is 150 °C.
  6. What is the storage temperature range for the BAS40L-G3-08?
    The storage temperature range is -55 to +150 °C.
  7. What is the forward voltage drop at 40 mA for the BAS40L-G3-08?
    The forward voltage drop at 40 mA is 1 V.
  8. What is the reverse recovery time of the BAS40L-G3-08?
    The reverse recovery time is 5 ns.
  9. Is the BAS40L-G3-08 protected against electrostatic discharges?
    Yes, it is protected by a PN junction guard against electrostatic discharges.
  10. What are the thermal characteristics of the BAS40L-G3-08?
    The thermal resistance junction to ambient (RthJA) is 420 K/W, and the thermal resistance junction to lead (RthJL) is 100 K/W.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 40 V
Capacitance @ Vr, F:2.9pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:150°C
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Similar Products

Part Number BAS40L-G3-08 BAS40L-HG3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 10 µA @ 40 V 10 µA @ 40 V
Capacitance @ Vr, F 2.9pF @ 0V, 1MHz 2.9pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric)
Supplier Device Package DFN1006-2A DFN1006-2A
Operating Temperature - Junction 150°C 150°C

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