BAS40L-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS40L-G3-08

Manufacturer No:
BAS40L-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SCHOTTKY DIODE DFN1006-2A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40L-G3-08, manufactured by Vishay General Semiconductor - Diodes Division, is a small signal Schottky diode array. This component features a pair of series-connected diodes housed in a compact surface mount package, specifically the DFN1006-2A package. It is designed to handle a maximum reverse voltage of 40 V and a forward current of up to 200 mA. The diode array is known for its fast switching characteristics and low turn-on voltage, making it suitable for a variety of applications requiring efficient and reliable diode performance.

Key Specifications

ParameterValueUnit
Reverse Voltage (VR)40V
Forward Current (IF)200mA
Non-repetitive Peak Forward Current (IFSM)500mA (tp = 10 ms, Tj = 25 °C)
Power Dissipation (Ptot)300mW (on FR-4 board with recommended soldering footprint)
Thermal Resistance Junction to Ambient (RthJA)420K/W (on FR-4 board with recommended soldering footprint)
Maximum Junction Temperature (Tj max.)150°C
Storage Temperature Range (Tstg)-55 to +150°C
Operating Temperature Range (Top)-55 to +150°C
Forward Voltage Drop (VF) at IF = 40 mA1V
Reverse Recovery Time5ns

Key Features

  • Compact surface mount package (DFN1006-2A)
  • Low turn-on voltage and fast switching characteristics
  • Protected by a PN junction guard against electrostatic discharges
  • Surface-mounted device (SMD) with visible and sidewall plated/wettable flanks for easy soldering inspection
  • AEC-Q101 qualified for automotive applications
  • High power dissipation compared to SOT-23 packages

Applications

The BAS40L-G3-08 is suitable for a wide range of applications, including:

  • Automotive systems (AEC-Q101 qualified)
  • Consumer electronics requiring low voltage and high current handling
  • Industrial control systems
  • Communication devices
  • Power management circuits

Q & A

  1. What is the maximum reverse voltage of the BAS40L-G3-08?
    The maximum reverse voltage is 40 V.
  2. What is the forward current rating of the BAS40L-G3-08?
    The forward current rating is up to 200 mA.
  3. What is the package type of the BAS40L-G3-08?
    The package type is DFN1006-2A.
  4. Is the BAS40L-G3-08 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified for automotive applications.
  5. What is the maximum junction temperature of the BAS40L-G3-08?
    The maximum junction temperature is 150 °C.
  6. What is the storage temperature range for the BAS40L-G3-08?
    The storage temperature range is -55 to +150 °C.
  7. What is the forward voltage drop at 40 mA for the BAS40L-G3-08?
    The forward voltage drop at 40 mA is 1 V.
  8. What is the reverse recovery time of the BAS40L-G3-08?
    The reverse recovery time is 5 ns.
  9. Is the BAS40L-G3-08 protected against electrostatic discharges?
    Yes, it is protected by a PN junction guard against electrostatic discharges.
  10. What are the thermal characteristics of the BAS40L-G3-08?
    The thermal resistance junction to ambient (RthJA) is 420 K/W, and the thermal resistance junction to lead (RthJL) is 100 K/W.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 40 V
Capacitance @ Vr, F:2.9pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:150°C
0 Remaining View Similar

In Stock

$0.31
2,922

Please send RFQ , we will respond immediately.

Same Series
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number BAS40L-G3-08 BAS40L-HG3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 10 µA @ 40 V 10 µA @ 40 V
Capacitance @ Vr, F 2.9pF @ 0V, 1MHz 2.9pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric)
Supplier Device Package DFN1006-2A DFN1006-2A
Operating Temperature - Junction 150°C 150°C

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL

Related Product By Brand

SM6T68A-E3/5B
SM6T68A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
1.5KE6.8A-E3/51
1.5KE6.8A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM6T33AHE3/52
SM6T33AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T18AHM3/I
SM6T18AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SMBJ5.0CAHM3/H
SMBJ5.0CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
BAV70-E3-18
BAV70-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 125MA SOT23
BAS21-E3-08
BAS21-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
1N4002GPEHE3/73
1N4002GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
BAS40-02V-V-G-08
BAS40-02V-V-G-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 120MA SOD523
BZX384C3V3-HE3-08
BZX384C3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323
BZX384C2V4-E3-08
BZX384C2V4-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX84C51-G3-18
BZX84C51-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3