BAS40L-HG3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS40L-HG3-08

Manufacturer No:
BAS40L-HG3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SCHOTTKY DIODE DFN1006-2A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40L-HG3-08 is a Schottky diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications, particularly in automotive and industrial sectors. It features a compact DFN1006-2A package, which is leadless and ultra-small, measuring 1 mm x 0.6 mm x 0.45 mm. This design enhances thermal performance and saves space in circuit designs. The diode is RoHS-compliant, halogen-free, and meets Vishay Green standards, ensuring environmental sustainability.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 40 V
Forward Current on FR-4 board - IF 200 mA
Non-repetitive Peak Forward Current Tj = 25 °C, tp = 10 ms IFSM 500 mA
Power Dissipation on FR-4 board - Ptot 300 mW
Thermal Resistance Junction to Ambient Air - RthJA 420 K/W
Maximum Junction Temperature - Tj max. 150 °C
Storage Temperature Range - Tstg -55 to +150 °C
Operating Temperature Range - Top -55 to +150 °C

Key Features

  • Compact Package: Leadless ultra-small DFN1006-2A package (1 mm x 0.6 mm x 0.45 mm) with wettable flanks, enhancing thermal performance and saving space.
  • AEC-Q101 Qualified: Available in versions that meet the AEC-Q101 automotive qualification standard.
  • Surface-Mounted Device (SMD): Plastic package with visible and sidewall plated/wettable flanks, supporting automated optical inspection (AOI) for automotive systems.
  • Environmental Compliance: RoHS-compliant, halogen-free, and meets Vishay Green standards.
  • Thermal Performance: Better power dissipation compared to SOT-23 packages.
  • Protection: Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
  • Moisture Sensitivity Level (MSL): MSL of 1 in accordance with J-STD-020.
  • Flammability Rating: UL 94 V-0 flammability rating.

Applications

The BAS40L-HG3-08 Schottky diode is suitable for various applications, including:

  • Automotive Systems: Ideal for use in automotive electronics due to its AEC-Q101 qualification and support for AOI.
  • Industrial Applications: Used in standard switching and Schottky diode roles where high reliability and compact design are essential.

Q & A

  1. What is the reverse voltage rating of the BAS40L-HG3-08?

    The reverse voltage rating is 40 V.

  2. What is the forward current rating of the BAS40L-HG3-08?

    The forward current rating is 200 mA.

  3. What is the non-repetitive peak forward current of the BAS40L-HG3-08?

    The non-repetitive peak forward current is 500 mA at Tj = 25 °C and tp = 10 ms.

  4. What is the maximum junction temperature of the BAS40L-HG3-08?

    The maximum junction temperature is 150 °C.

  5. Is the BAS40L-HG3-08 RoHS-compliant?

    Yes, the BAS40L-HG3-08 is RoHS-compliant and halogen-free.

  6. What is the package type of the BAS40L-HG3-08?

    The package type is DFN1006-2A, which is leadless and ultra-small.

  7. Is the BAS40L-HG3-08 AEC-Q101 qualified?

    Yes, the BAS40L-HG3-08 is available in versions that meet the AEC-Q101 automotive qualification standard.

  8. What are the storage and operating temperature ranges for the BAS40L-HG3-08?

    The storage temperature range is -55 °C to +150 °C, and the operating temperature range is also -55 °C to +150 °C.

  9. Does the BAS40L-HG3-08 support automated optical inspection (AOI)?

    Yes, it supports AOI for automotive systems due to its visible and sidewall plated/wettable flanks.

  10. What is the moisture sensitivity level (MSL) of the BAS40L-HG3-08?

    The MSL is 1 in accordance with J-STD-020.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 40 V
Capacitance @ Vr, F:2.9pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:150°C
0 Remaining View Similar

In Stock

$0.35
1,841

Please send RFQ , we will respond immediately.

Same Series
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BAS40L-HG3-08 BAS40L-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 10 µA @ 40 V 10 µA @ 40 V
Capacitance @ Vr, F 2.9pF @ 0V, 1MHz 2.9pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric)
Supplier Device Package DFN1006-2A DFN1006-2A
Operating Temperature - Junction 150°C 150°C

Related Product By Categories

BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

SM6T220A-E3/52
SM6T220A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T22CA-M3/52
SM6T22CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM15T18A-M3/9AT
SM15T18A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM15T68CAHM3/I
SM15T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAV70-HE3-18
BAV70-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
BAT54C-HE3-08
BAT54C-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BAV21-TR
BAV21-TR
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA DO35
BYW29-200-E3/45
BYW29-200-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MUR120/54
MUR120/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N4002GPE-E3/91
1N4002GPE-E3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
BZX84C18-E3-08
BZX84C18-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX384B3V0-G3-08
BZX384B3V0-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323