BAS40L-HG3-08
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Vishay General Semiconductor - Diodes Division BAS40L-HG3-08

Manufacturer No:
BAS40L-HG3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SCHOTTKY DIODE DFN1006-2A
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The BAS40L-HG3-08 is a Schottky diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications, particularly in automotive and industrial sectors. It features a compact DFN1006-2A package, which is leadless and ultra-small, measuring 1 mm x 0.6 mm x 0.45 mm. This design enhances thermal performance and saves space in circuit designs. The diode is RoHS-compliant, halogen-free, and meets Vishay Green standards, ensuring environmental sustainability.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 40 V
Forward Current on FR-4 board - IF 200 mA
Non-repetitive Peak Forward Current Tj = 25 °C, tp = 10 ms IFSM 500 mA
Power Dissipation on FR-4 board - Ptot 300 mW
Thermal Resistance Junction to Ambient Air - RthJA 420 K/W
Maximum Junction Temperature - Tj max. 150 °C
Storage Temperature Range - Tstg -55 to +150 °C
Operating Temperature Range - Top -55 to +150 °C

Key Features

  • Compact Package: Leadless ultra-small DFN1006-2A package (1 mm x 0.6 mm x 0.45 mm) with wettable flanks, enhancing thermal performance and saving space.
  • AEC-Q101 Qualified: Available in versions that meet the AEC-Q101 automotive qualification standard.
  • Surface-Mounted Device (SMD): Plastic package with visible and sidewall plated/wettable flanks, supporting automated optical inspection (AOI) for automotive systems.
  • Environmental Compliance: RoHS-compliant, halogen-free, and meets Vishay Green standards.
  • Thermal Performance: Better power dissipation compared to SOT-23 packages.
  • Protection: Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
  • Moisture Sensitivity Level (MSL): MSL of 1 in accordance with J-STD-020.
  • Flammability Rating: UL 94 V-0 flammability rating.

Applications

The BAS40L-HG3-08 Schottky diode is suitable for various applications, including:

  • Automotive Systems: Ideal for use in automotive electronics due to its AEC-Q101 qualification and support for AOI.
  • Industrial Applications: Used in standard switching and Schottky diode roles where high reliability and compact design are essential.

Q & A

  1. What is the reverse voltage rating of the BAS40L-HG3-08?

    The reverse voltage rating is 40 V.

  2. What is the forward current rating of the BAS40L-HG3-08?

    The forward current rating is 200 mA.

  3. What is the non-repetitive peak forward current of the BAS40L-HG3-08?

    The non-repetitive peak forward current is 500 mA at Tj = 25 °C and tp = 10 ms.

  4. What is the maximum junction temperature of the BAS40L-HG3-08?

    The maximum junction temperature is 150 °C.

  5. Is the BAS40L-HG3-08 RoHS-compliant?

    Yes, the BAS40L-HG3-08 is RoHS-compliant and halogen-free.

  6. What is the package type of the BAS40L-HG3-08?

    The package type is DFN1006-2A, which is leadless and ultra-small.

  7. Is the BAS40L-HG3-08 AEC-Q101 qualified?

    Yes, the BAS40L-HG3-08 is available in versions that meet the AEC-Q101 automotive qualification standard.

  8. What are the storage and operating temperature ranges for the BAS40L-HG3-08?

    The storage temperature range is -55 °C to +150 °C, and the operating temperature range is also -55 °C to +150 °C.

  9. Does the BAS40L-HG3-08 support automated optical inspection (AOI)?

    Yes, it supports AOI for automotive systems due to its visible and sidewall plated/wettable flanks.

  10. What is the moisture sensitivity level (MSL) of the BAS40L-HG3-08?

    The MSL is 1 in accordance with J-STD-020.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 40 V
Capacitance @ Vr, F:2.9pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:150°C
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Similar Products

Part Number BAS40L-HG3-08 BAS40L-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 10 µA @ 40 V 10 µA @ 40 V
Capacitance @ Vr, F 2.9pF @ 0V, 1MHz 2.9pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric)
Supplier Device Package DFN1006-2A DFN1006-2A
Operating Temperature - Junction 150°C 150°C

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