Overview
The RB751V-40 RRG, produced by Taiwan Semiconductor Corporation, is a 200mW, 0.37V Schottky Barrier Diode. This component is designed for high-efficiency and low-loss applications, making it suitable for a variety of electronic circuits. The diode is packaged in a SOD-323 configuration, which is ideal for mounting on small surfaces, enhancing its versatility in compact designs.
Key Specifications
Parameter | Symbol | Unit | Typical | Maximum |
---|---|---|---|---|
Repetitive Peak Reverse Voltage | VRRM | V | - | 40 |
Forward Current (Average) | IF(AV) | mA | - | 30 |
Non-repetitive Peak Forward Surge Current | IFSM | A | - | 0.2 (at t = 8.3ms) |
Junction Temperature Range | TJ | °C | -45 to +125 | - |
Storage Temperature Range | TSTG | °C | -45 to +125 | - |
Forward Voltage per Diode | VF | V | - | 0.37 (at IF = 1mA, TJ = 25°C) |
Reverse Current per Diode | IR | μA | - | 0.5 (at VR = 30V, TJ = 25°C) |
Junction Capacitance | CJ | pF | 2 | - |
Junction-to-Ambient Thermal Resistance | RθJA | °C/W | 500 | - |
Key Features
- Designed for mounting on small surfaces, making it ideal for compact designs.
- Low forward voltage drop of 0.37V at 1mA, enhancing efficiency in power applications.
- Low capacitance of 2 pF, reducing switching losses and improving high-frequency performance.
- High repetitive peak reverse voltage of 40V, ensuring robustness against voltage spikes.
- Non-repetitive peak forward surge current of 0.2A at 8.3ms, providing protection against transient overcurrents.
- Wide junction temperature range from -45°C to +125°C, suitable for various environmental conditions.
Applications
- Power supply circuits: The low forward voltage drop and high efficiency make it suitable for rectification and voltage regulation in power supplies.
- Switching circuits: The low capacitance and fast switching times make it ideal for high-frequency switching applications.
- Protection circuits: The high repetitive peak reverse voltage and surge current capability make it suitable for overvoltage and overcurrent protection.
- Audio and signal processing: The low noise and high frequency performance make it suitable for audio and signal processing circuits.
Q & A
- What is the typical forward voltage of the RB751V-40 RRG at 1mA?
The typical forward voltage is 0.37V at 1mA and a junction temperature of 25°C.
- What is the maximum repetitive peak reverse voltage of the RB751V-40 RRG?
The maximum repetitive peak reverse voltage is 40V.
- What is the junction capacitance of the RB751V-40 RRG?
The junction capacitance is 2 pF at 1 MHz and 0V reverse voltage.
- What is the non-repetitive peak forward surge current of the RB751V-40 RRG?
The non-repetitive peak forward surge current is 0.2A at a pulse duration of 8.3ms.
- What is the junction temperature range of the RB751V-40 RRG?
The junction temperature range is from -45°C to +125°C.
- What package type is the RB751V-40 RRG available in?
The RB751V-40 RRG is available in the SOD-323 package.
- What are some common applications of the RB751V-40 RRG?
Common applications include power supply circuits, switching circuits, protection circuits, and audio and signal processing circuits.
- What is the storage temperature range for the RB751V-40 RRG?
The storage temperature range is from -45°C to +125°C.
- What is the reverse current of the RB751V-40 RRG at 30V reverse voltage?
The reverse current is 0.5 μA at 30V reverse voltage and a junction temperature of 25°C.
- What is the thermal resistance from junction to ambient for the RB751V-40 RRG?
The thermal resistance from junction to ambient is 500 °C/W.