RB751V-40 RRG
  • Share:

Taiwan Semiconductor Corporation RB751V-40 RRG

Manufacturer No:
RB751V-40 RRG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 30MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751V-40 RRG, produced by Taiwan Semiconductor Corporation, is a 200mW, 0.37V Schottky Barrier Diode. This component is designed for high-efficiency and low-loss applications, making it suitable for a variety of electronic circuits. The diode is packaged in a SOD-323 configuration, which is ideal for mounting on small surfaces, enhancing its versatility in compact designs.

Key Specifications

Parameter Symbol Unit Typical Maximum
Repetitive Peak Reverse Voltage VRRM V - 40
Forward Current (Average) IF(AV) mA - 30
Non-repetitive Peak Forward Surge Current IFSM A - 0.2 (at t = 8.3ms)
Junction Temperature Range TJ °C -45 to +125 -
Storage Temperature Range TSTG °C -45 to +125 -
Forward Voltage per Diode VF V - 0.37 (at IF = 1mA, TJ = 25°C)
Reverse Current per Diode IR μA - 0.5 (at VR = 30V, TJ = 25°C)
Junction Capacitance CJ pF 2 -
Junction-to-Ambient Thermal Resistance RθJA °C/W 500 -

Key Features

  • Designed for mounting on small surfaces, making it ideal for compact designs.
  • Low forward voltage drop of 0.37V at 1mA, enhancing efficiency in power applications.
  • Low capacitance of 2 pF, reducing switching losses and improving high-frequency performance.
  • High repetitive peak reverse voltage of 40V, ensuring robustness against voltage spikes.
  • Non-repetitive peak forward surge current of 0.2A at 8.3ms, providing protection against transient overcurrents.
  • Wide junction temperature range from -45°C to +125°C, suitable for various environmental conditions.

Applications

  • Power supply circuits: The low forward voltage drop and high efficiency make it suitable for rectification and voltage regulation in power supplies.
  • Switching circuits: The low capacitance and fast switching times make it ideal for high-frequency switching applications.
  • Protection circuits: The high repetitive peak reverse voltage and surge current capability make it suitable for overvoltage and overcurrent protection.
  • Audio and signal processing: The low noise and high frequency performance make it suitable for audio and signal processing circuits.

Q & A

  1. What is the typical forward voltage of the RB751V-40 RRG at 1mA?

    The typical forward voltage is 0.37V at 1mA and a junction temperature of 25°C.

  2. What is the maximum repetitive peak reverse voltage of the RB751V-40 RRG?

    The maximum repetitive peak reverse voltage is 40V.

  3. What is the junction capacitance of the RB751V-40 RRG?

    The junction capacitance is 2 pF at 1 MHz and 0V reverse voltage.

  4. What is the non-repetitive peak forward surge current of the RB751V-40 RRG?

    The non-repetitive peak forward surge current is 0.2A at a pulse duration of 8.3ms.

  5. What is the junction temperature range of the RB751V-40 RRG?

    The junction temperature range is from -45°C to +125°C.

  6. What package type is the RB751V-40 RRG available in?

    The RB751V-40 RRG is available in the SOD-323 package.

  7. What are some common applications of the RB751V-40 RRG?

    Common applications include power supply circuits, switching circuits, protection circuits, and audio and signal processing circuits.

  8. What is the storage temperature range for the RB751V-40 RRG?

    The storage temperature range is from -45°C to +125°C.

  9. What is the reverse current of the RB751V-40 RRG at 30V reverse voltage?

    The reverse current is 0.5 μA at 30V reverse voltage and a junction temperature of 25°C.

  10. What is the thermal resistance from junction to ambient for the RB751V-40 RRG?

    The thermal resistance from junction to ambient is 500 °C/W.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:370 mV @ 1 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 nA @ 30 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-40°C ~ 125°C
0 Remaining View Similar

In Stock

$0.05
13,883

Please send RFQ , we will respond immediately.

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK

Related Product By Brand

BAV99L
BAV99L
Taiwan Semiconductor Corporation
SOT-23, 70V, 0.2A, SWITCHING DIO
BAS40-06 RFG
BAS40-06 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 40V SOT23
MBR10100CTH
MBR10100CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 100V TO220
1N4001G R0G
1N4001G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N5406GH
1N5406GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR420SHM6G
MUR420SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
1N5406GHB0G
1N5406GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
BZV55B15 L1G
BZV55B15 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BZV55C9V1 L1G
BZV55C9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF
BZX585B5V6 RKG
BZX585B5V6 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 200MW SOD523F
BZX55C10 A0G
BZX55C10 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW DO35
BC847BW RFG
BC847BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323