STR2N2VH5
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STMicroelectronics STR2N2VH5

Manufacturer No:
STR2N2VH5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 2.3A SOT23
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The STR2N2VH5 is an N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET™ H5 technology. This device is optimized to achieve very low on-state resistance, contributing to a Figure of Merit (FoM) that is among the best in its class. The STR2N2VH5 is designed for high-performance applications requiring low power loss and high efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 20 V
RDS(on) (On-State Resistance) 0.025 Ω
ID (Drain Current) 2.3 A
Package SOT-23
Operating Temperature Range -40 to 150 °C
RoHS Compliance Ecopack2

Key Features

  • Low On-State Resistance (RDS(on)): Ensures minimal power loss during operation.
  • High Avalanche Ruggedness: Provides robustness against voltage spikes and transient conditions.
  • Low Gate Drive Power Loss: Reduces the energy required to switch the MOSFET on and off.

Applications

The STR2N2VH5 is suitable for a variety of applications, including:

  • Industrial Applications: Such as power supplies, motor control, and industrial automation.
  • Personal Electronics: Including battery management systems, power adapters, and other portable electronic devices.
  • Automotive Applications: For use in automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the typical on-state resistance of the STR2N2VH5?

    The typical on-state resistance (RDS(on)) of the STR2N2VH5 is 0.025 Ω.

  2. What is the maximum drain current for the STR2N2VH5?

    The maximum drain current (ID) for the STR2N2VH5 is 2.3 A.

  3. What package type is the STR2N2VH5 available in?

    The STR2N2VH5 is available in the SOT-23 package.

  4. What is the operating temperature range for the STR2N2VH5?

    The operating temperature range for the STR2N2VH5 is -40°C to 150°C.

  5. Is the STR2N2VH5 RoHS compliant?

    Yes, the STR2N2VH5 is RoHS compliant with an Ecopack2 grade.

  6. What are some key applications for the STR2N2VH5?

    The STR2N2VH5 is suitable for industrial, personal electronics, and automotive applications.

  7. What technology is used in the STR2N2VH5?

    The STR2N2VH5 is developed using STMicroelectronics’ STripFET™ H5 technology.

  8. Does the STR2N2VH5 have high avalanche ruggedness?

    Yes, the STR2N2VH5 features high avalanche ruggedness.

  9. How can I obtain EDA symbols, footprints, and 3D models for the STR2N2VH5?

    You can download EDA symbols, footprints, and 3D models for the STR2N2VH5 from STMicroelectronics’ website.

  10. Where can I purchase the STR2N2VH5?

    The STR2N2VH5 can be purchased from STMicroelectronics and various authorized distributors such as Future Electronics, Digi-Key, and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Tj)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:30mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:367 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):350mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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