STP03D200
  • Share:

STMicroelectronics STP03D200

Manufacturer No:
STP03D200
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN DARL 1200V 0.1A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP03D200 is a high-performance NPN Darlington transistor manufactured by STMicroelectronics. This device is composed of two extra high voltage NPN transistors in a Darlington configuration, housed in a single TO-220 package. It is designed to provide high gain characteristics and extra high voltage capability, making it suitable for various demanding electronic applications.

Key Specifications

ParameterValueUnit
Collector-base voltage (VCBO)2000V
Collector-emitter voltage (VCEO)1200V
Emitter-base voltage (VEBO)20V
Collector current (IC)100mA
Collector peak current (ICM)200mA
Total dissipation at Tc = 25 °C (PTOT)40W
Storage temperature (TSTG)-65 to 150°C
Max. operating junction temperature (TJ)150°C
Thermal resistance junction-case (RthJC)3.13°C/W
DC current gain (hFE)200
Collector-emitter saturation voltage (VCE(sat))2V
Base-emitter saturation voltage (VBE(sat))2V

Key Features

  • Extra high voltage capability up to 2 kV
  • High gain characteristic due to Darlington configuration
  • High collector-emitter breakdown voltage (V(BR)CEO) of 1200 V
  • Low collector-emitter and base-emitter saturation voltages
  • High thermal dissipation capability with a total dissipation of 40 W at Tc = 25 °C
  • ECOPACK® packaging for environmental compliance

Applications

The STP03D200 is particularly suited for applications requiring high voltage and high gain, such as:

  • Active start-up networks in 3-phase Switch-Mode Power Supplies (S.M.P.S.) as described in application note AN2454
  • High voltage switching and amplification circuits
  • Power management systems requiring high reliability and performance

Q & A

  1. What is the collector-base voltage rating of the STP03D200?
    The collector-base voltage (VCBO) is 2000 V.
  2. What is the maximum collector current of the STP03D200?
    The maximum collector current (IC) is 100 mA.
  3. What is the thermal resistance junction-case of the STP03D200?
    The thermal resistance junction-case (RthJC) is 3.13 °C/W.
  4. What is the typical DC current gain (hFE) of the STP03D200?
    The typical DC current gain (hFE) is 200.
  5. In what package is the STP03D200 available?
    The STP03D200 is available in a TO-220 package.
  6. What are the storage temperature limits for the STP03D200?
    The storage temperature (TSTG) range is -65 to 150 °C.
  7. What is the maximum operating junction temperature for the STP03D200?
    The maximum operating junction temperature (TJ) is 150 °C.
  8. What is the collector-emitter breakdown voltage of the STP03D200?
    The collector-emitter breakdown voltage (V(BR)CEO) is 1200 V.
  9. What are some typical applications of the STP03D200?
    Typical applications include active start-up networks in 3-phase S.M.P.S., high voltage switching, and power management systems.
  10. Does the STP03D200 come in environmentally compliant packaging?
    Yes, the STP03D200 is available in ECOPACK® packages, which meet various levels of environmental compliance.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):1200 V
Vce Saturation (Max) @ Ib, Ic:2V @ 500µA, 50mA
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 10V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$9.27
86

Please send RFQ , we will respond immediately.

Related Product By Categories

PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
BC817K-25HVL
BC817K-25HVL
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
NSV1C201LT1G
NSV1C201LT1G
onsemi
TRANS NPN 100V 2A SOT23-3
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
BCP69TA
BCP69TA
Diodes Incorporated
TRANS PNP BIPOL 20V 1A SOT-223
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70

Related Product By Brand

STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STF28NM50N
STF28NM50N
STMicroelectronics
MOSFET N-CH 500V 21A TO220FP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
LM239DT
LM239DT
STMicroelectronics
IC COMP QUAD LOW PWR 14SOIC
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO