STP03D200
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STMicroelectronics STP03D200

Manufacturer No:
STP03D200
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN DARL 1200V 0.1A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP03D200 is a high-performance NPN Darlington transistor manufactured by STMicroelectronics. This device is composed of two extra high voltage NPN transistors in a Darlington configuration, housed in a single TO-220 package. It is designed to provide high gain characteristics and extra high voltage capability, making it suitable for various demanding electronic applications.

Key Specifications

ParameterValueUnit
Collector-base voltage (VCBO)2000V
Collector-emitter voltage (VCEO)1200V
Emitter-base voltage (VEBO)20V
Collector current (IC)100mA
Collector peak current (ICM)200mA
Total dissipation at Tc = 25 °C (PTOT)40W
Storage temperature (TSTG)-65 to 150°C
Max. operating junction temperature (TJ)150°C
Thermal resistance junction-case (RthJC)3.13°C/W
DC current gain (hFE)200
Collector-emitter saturation voltage (VCE(sat))2V
Base-emitter saturation voltage (VBE(sat))2V

Key Features

  • Extra high voltage capability up to 2 kV
  • High gain characteristic due to Darlington configuration
  • High collector-emitter breakdown voltage (V(BR)CEO) of 1200 V
  • Low collector-emitter and base-emitter saturation voltages
  • High thermal dissipation capability with a total dissipation of 40 W at Tc = 25 °C
  • ECOPACK® packaging for environmental compliance

Applications

The STP03D200 is particularly suited for applications requiring high voltage and high gain, such as:

  • Active start-up networks in 3-phase Switch-Mode Power Supplies (S.M.P.S.) as described in application note AN2454
  • High voltage switching and amplification circuits
  • Power management systems requiring high reliability and performance

Q & A

  1. What is the collector-base voltage rating of the STP03D200?
    The collector-base voltage (VCBO) is 2000 V.
  2. What is the maximum collector current of the STP03D200?
    The maximum collector current (IC) is 100 mA.
  3. What is the thermal resistance junction-case of the STP03D200?
    The thermal resistance junction-case (RthJC) is 3.13 °C/W.
  4. What is the typical DC current gain (hFE) of the STP03D200?
    The typical DC current gain (hFE) is 200.
  5. In what package is the STP03D200 available?
    The STP03D200 is available in a TO-220 package.
  6. What are the storage temperature limits for the STP03D200?
    The storage temperature (TSTG) range is -65 to 150 °C.
  7. What is the maximum operating junction temperature for the STP03D200?
    The maximum operating junction temperature (TJ) is 150 °C.
  8. What is the collector-emitter breakdown voltage of the STP03D200?
    The collector-emitter breakdown voltage (V(BR)CEO) is 1200 V.
  9. What are some typical applications of the STP03D200?
    Typical applications include active start-up networks in 3-phase S.M.P.S., high voltage switching, and power management systems.
  10. Does the STP03D200 come in environmentally compliant packaging?
    Yes, the STP03D200 is available in ECOPACK® packages, which meet various levels of environmental compliance.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):1200 V
Vce Saturation (Max) @ Ib, Ic:2V @ 500µA, 50mA
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 10V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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