Overview
The STL50DN6F7 is a dual N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is housed in a PowerFLAT™ 5x6 double island package, which enhances thermal performance and reduces the overall footprint. The STL50DN6F7 is designed for high-efficiency switching applications, featuring a very low on-state resistance and reduced internal capacitance and gate charge, enabling faster and more efficient switching operations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 60 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Continuous drain current (ID) at TC = 25 °C | 57 | A |
| Pulsed drain current (IDM) | 228 | A |
| Static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 7.5 A | 9 - 11 | mΩ |
| Gate threshold voltage (VGS(th)) | 2 - 4 | V |
| Input capacitance (Ciss) at VDS = 30 V, f = 1 MHz, VGS = 0 V | 1035 | pF |
| Output capacitance (Coss) | 450 | pF |
| Reverse transfer capacitance (Crss) | 53 | pF |
| Total gate charge (Qg) at VDD = 30 V, ID = 15 A, VGS = 10 V | 17 | nC |
| Operating junction temperature (TJ) | -55 to 175 | °C |
Key Features
- Among the lowest RDS(on) on the market, with a typical value of 9 mΩ.
- Excellent figure of merit (FoM) for high efficiency.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness.
- Enhanced trench gate structure for reduced internal capacitance and gate charge.
- PowerFLAT™ 5x6 double island package for improved thermal performance.
Applications
The STL50DN6F7 is suitable for various high-efficiency switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Industrial automation and control systems.
- Automotive systems requiring high reliability and efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL50DN6F7?
The maximum drain-source voltage (VDS) is 60 V. - What is the typical on-state resistance (RDS(on)) of the STL50DN6F7?
The typical on-state resistance (RDS(on)) is 9 mΩ. - What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 57 A. - What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 2 to 4 V. - What is the total gate charge (Qg) at VDD = 30 V, ID = 15 A, VGS = 10 V?
The total gate charge (Qg) is 17 nC. - What is the operating junction temperature (TJ) range?
The operating junction temperature (TJ) range is -55 to 175 °C. - What package type is the STL50DN6F7 available in?
The STL50DN6F7 is available in a PowerFLAT™ 5x6 double island package. - What are the key features of the STL50DN6F7?
The key features include among the lowest RDS(on) on the market, excellent FoM, low Crss/Ciss ratio, high avalanche ruggedness, and an enhanced trench gate structure. - What are some typical applications of the STL50DN6F7?
Typical applications include power supplies, DC-DC converters, motor control, industrial automation, and automotive systems. - Is the STL50DN6F7 RoHS compliant?
Yes, the STL50DN6F7 is RoHS compliant.
