STF27N60M2-EP
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STMicroelectronics STF27N60M2-EP

Manufacturer No:
STF27N60M2-EP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 20A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF27N60M2-EP is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced MDmesh™ M2 EP technology. This device is designed to offer excellent electrical characteristics, making it suitable for a wide range of power management applications. With its robust design and enhanced performance features, the STF27N60M2-EP is ideal for systems requiring high reliability and efficiency.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Continuous Drain Current (Id)20 A
Power Dissipation (Pd)30 W
On-Resistance (Rds(on))0.150 Ω (typ.)
Input Capacitance (Ciss)1.32 nF
Operating Temperature Range-55 °C to 150 °C
Package TypeThrough Hole TO-220FP

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • Very low turn-off switching losses
  • 100% avalanche tested
  • Zener-protected gate

Applications

The STF27N60M2-EP is suitable for various power management applications, including but not limited to:

  • Switch-mode power supplies
  • Motor control and drives
  • Power factor correction (PFC) circuits
  • High-frequency switching circuits
  • Aerospace and defense systems due to its enhanced performance and reliability

Q & A

  1. What is the voltage rating of the STF27N60M2-EP?
    The voltage rating of the STF27N60M2-EP is 600 V.
  2. What is the continuous drain current of the STF27N60M2-EP?
    The continuous drain current is 20 A.
  3. What is the typical on-resistance of the STF27N60M2-EP?
    The typical on-resistance is 0.150 Ω.
  4. What is the operating temperature range of the STF27N60M2-EP?
    The operating temperature range is from -55 °C to 150 °C.
  5. What package type does the STF27N60M2-EP come in?
    The STF27N60M2-EP comes in a Through Hole TO-220FP package.
  6. Is the STF27N60M2-EP 100% avalanche tested?
    Yes, the STF27N60M2-EP is 100% avalanche tested.
  7. What are some key features of the STF27N60M2-EP?
    Key features include extremely low gate charge, excellent output capacitance profile, very low turn-off switching losses, and a Zener-protected gate.
  8. What are some common applications for the STF27N60M2-EP?
    Common applications include switch-mode power supplies, motor control and drives, power factor correction circuits, and high-frequency switching circuits.
  9. Why is the STF27N60M2-EP suitable for aerospace and defense systems?
    The STF27N60M2-EP is suitable for aerospace and defense systems due to its enhanced performance and reliability.
  10. Where can I find detailed specifications for the STF27N60M2-EP?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF27N60M2-EP STF20N60M2-EP STF25N60M2-EP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 13A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 163mOhm @ 10A, 10V - 188mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V 22 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V - ±25V
Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 100 V - 1090 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) - 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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