ST13003DN
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STMicroelectronics ST13003DN

Manufacturer No:
ST13003DN
Manufacturer:
STMicroelectronics
Package:
Bulk
Description:
TRANS NPN 400V 1A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ST13003DN is a high-voltage, fast-switching NPN power transistor manufactured by STMicroelectronics. This device is produced using high-voltage multi-epitaxial planar technology, which enhances its switching speeds and voltage capability. The transistor features a cellular emitter structure with planar edge termination, ensuring high switching speeds while maintaining a wide Reverse Bias Safe Operating Area (RBSOA).

Key Specifications

ParameterValue
Part NumberST13003DN
Marketing StatusActive
PackageSOT-32
GradeIndustrial
RoHS Compliance GradeEcopack1
Vces (Collector-Emitter Voltage)700 V
Vceo (Collector-Emitter Voltage with Base Open)400 V
Operating Temperature (°C)-40 to 150

Key Features

  • High voltage capability
  • Low spread of dynamic parameters
  • Very high switching speed
  • Cellular emitter structure with planar edge termination for enhanced switching speeds and wide RBSOA

Applications

  • Fast electronic switching applications
  • Non-inductive resistor roles
  • Fast recovery rectifier applications

Q & A

  1. What is the ST13003DN transistor used for? The ST13003DN is used in high-voltage, fast-switching applications, including fast electronic switching, non-inductive resistor roles, and fast recovery rectifier applications.
  2. What technology is used to manufacture the ST13003DN? The ST13003DN is manufactured using high-voltage multi-epitaxial planar technology.
  3. What is the collector-emitter voltage (Vces) of the ST13003DN? The collector-emitter voltage (Vces) of the ST13003DN is 700 V.
  4. What is the operating temperature range of the ST13003DN? The operating temperature range of the ST13003DN is -40°C to 150°C.
  5. What package type is the ST13003DN available in? The ST13003DN is available in the SOT-32 package.
  6. Is the ST13003DN RoHS compliant? Yes, the ST13003DN is RoHS compliant with an Ecopack1 grade.
  7. What are the key features of the ST13003DN? Key features include high voltage capability, low spread of dynamic parameters, very high switching speed, and a cellular emitter structure with planar edge termination.
  8. Where can I find EDA symbols, footprints, and 3D models for the ST13003DN? You can find EDA symbols, footprints, and 3D models for the ST13003DN on the STMicroelectronics website.
  9. What is the collector-emitter voltage with base open (Vceo) of the ST13003DN? The collector-emitter voltage with base open (Vceo) of the ST13003DN is 400 V.
  10. Is the ST13003DN suitable for industrial applications? Yes, the ST13003DN is suitable for industrial applications with an industrial grade designation.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 330mA, 1A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:6 @ 500mA, 2V
Power - Max:20 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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Similar Products

Part Number ST13003DN ST13003N
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 330mA, 1A 1.2V @ 330mA, 1A
Current - Collector Cutoff (Max) 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 500mA, 2V 5 @ 1A, 10V
Power - Max 20 W 20 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 SOT-32-3

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