Overview
The ST13003DN is a high-voltage, fast-switching NPN power transistor manufactured by STMicroelectronics. This device is produced using high-voltage multi-epitaxial planar technology, which enhances its switching speeds and voltage capability. The transistor features a cellular emitter structure with planar edge termination, ensuring high switching speeds while maintaining a wide Reverse Bias Safe Operating Area (RBSOA).
Key Specifications
Parameter | Value |
---|---|
Part Number | ST13003DN |
Marketing Status | Active |
Package | SOT-32 |
Grade | Industrial |
RoHS Compliance Grade | Ecopack1 |
Vces (Collector-Emitter Voltage) | 700 V |
Vceo (Collector-Emitter Voltage with Base Open) | 400 V |
Operating Temperature (°C) | -40 to 150 |
Key Features
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed
- Cellular emitter structure with planar edge termination for enhanced switching speeds and wide RBSOA
Applications
- Fast electronic switching applications
- Non-inductive resistor roles
- Fast recovery rectifier applications
Q & A
- What is the ST13003DN transistor used for? The ST13003DN is used in high-voltage, fast-switching applications, including fast electronic switching, non-inductive resistor roles, and fast recovery rectifier applications.
- What technology is used to manufacture the ST13003DN? The ST13003DN is manufactured using high-voltage multi-epitaxial planar technology.
- What is the collector-emitter voltage (Vces) of the ST13003DN? The collector-emitter voltage (Vces) of the ST13003DN is 700 V.
- What is the operating temperature range of the ST13003DN? The operating temperature range of the ST13003DN is -40°C to 150°C.
- What package type is the ST13003DN available in? The ST13003DN is available in the SOT-32 package.
- Is the ST13003DN RoHS compliant? Yes, the ST13003DN is RoHS compliant with an Ecopack1 grade.
- What are the key features of the ST13003DN? Key features include high voltage capability, low spread of dynamic parameters, very high switching speed, and a cellular emitter structure with planar edge termination.
- Where can I find EDA symbols, footprints, and 3D models for the ST13003DN? You can find EDA symbols, footprints, and 3D models for the ST13003DN on the STMicroelectronics website.
- What is the collector-emitter voltage with base open (Vceo) of the ST13003DN? The collector-emitter voltage with base open (Vceo) of the ST13003DN is 400 V.
- Is the ST13003DN suitable for industrial applications? Yes, the ST13003DN is suitable for industrial applications with an industrial grade designation.