MJD44H11T4-A
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STMicroelectronics MJD44H11T4-A

Manufacturer No:
MJD44H11T4-A
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STMicroelectronics MJD44H11T4-A is an automotive-grade, low-voltage NPN power transistor. It is manufactured using low-voltage multi-epitaxial planar technology and is designed for general-purpose linear and switching applications. This transistor is part of STMicroelectronics' range of power bipolar transistors, which are known for their reliability and performance in various automotive and industrial contexts.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 8 A
Collector Peak Current (ICM) 16 A
Total Dissipation at Tcase = 25°C (PTOT) 20 W
Storage Temperature (TSTG) -55 to 150 °C
Maximum Operating Junction Temperature (TJ) 150 °C
Thermal Resistance Junction-Case (RthJC) 6.25 °C/W
Collector-Emitter Saturation Voltage (VCE(sat)) 1 V
Base-Emitter Saturation Voltage (VBE(sat)) 1.5 V
DC Current Gain (hFE) 40 - 60 -
Package TO-252 (DPAK) -

Key Features

  • Qualified for automotive applications
  • Fast switching speed
  • Low collector-emitter saturation voltage
  • Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix 'T4')

Applications

  • Power amplifiers
  • Switching circuits
  • General-purpose linear and switching applications

Q & A

  1. What is the collector-emitter voltage (VCEO) of the MJD44H11T4-A transistor?

    The collector-emitter voltage (VCEO) is 80 V.

  2. What is the maximum collector current (IC) for the MJD44H11T4-A?

    The maximum collector current (IC) is 8 A.

  3. What is the thermal resistance junction-case (RthJC) of the MJD44H11T4-A?

    The thermal resistance junction-case (RthJC) is 6.25 °C/W.

  4. What is the package type of the MJD44H11T4-A transistor?

    The package type is TO-252 (DPAK).

  5. Is the MJD44H11T4-A qualified for automotive applications?

    Yes, the MJD44H11T4-A is qualified for automotive applications.

  6. What is the collector-emitter saturation voltage (VCE(sat)) of the MJD44H11T4-A?

    The collector-emitter saturation voltage (VCE(sat)) is 1 V.

  7. What is the DC current gain (hFE) range for the MJD44H11T4-A?

    The DC current gain (hFE) range is 40 to 60.

  8. What are the typical applications of the MJD44H11T4-A transistor?

    The typical applications include power amplifiers, switching circuits, and general-purpose linear and switching applications.

  9. What is the maximum operating junction temperature (TJ) for the MJD44H11T4-A?

    The maximum operating junction temperature (TJ) is 150 °C.

  10. Is the MJD44H11T4-A RoHS compliant?

    Yes, the MJD44H11T4-A is RoHS compliant and comes in an ECOPACK1 package).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:20 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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