Overview
The MJB44H11T4-A is an automotive-grade low voltage NPN power transistor manufactured by STMicroelectronics. This transistor is designed using new low voltage planar technology with a double metal process, resulting in exceptionally high gain performance and very low saturation voltage. It is AEC-Q101 qualified, making it suitable for demanding automotive applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | |
| Maximum DC Collector Current | 20 A | |
| Maximum Collector-Emitter Voltage | 80 V | |
| Maximum Emitter-Base Voltage | 5 V | |
| Maximum Power Dissipation | 50 W | |
| Minimum DC Current Gain (hFE) | 40 | |
| Maximum Operating Junction Temperature | 150 °C | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Dimensions | 10.4 x 9.35 x 4.37 mm |
Key Features
- Designed for automotive applications and AEC-Q101 qualified.
- Low collector-emitter saturation voltage.
- Fast switching speed.
- High gain performance.
- Low voltage planar technology with double metal process.
Applications
- Power amplifiers.
- Switching circuits.
Q & A
- What is the maximum collector-emitter voltage of the MJB44H11T4-A transistor?
The maximum collector-emitter voltage is 80 V.
- What is the maximum collector current of the MJB44H11T4-A transistor?
The maximum collector current is 20 A.
- What is the package type of the MJB44H11T4-A transistor?
The package type is D2PAK (TO-263).
- What is the maximum operating junction temperature of the MJB44H11T4-A transistor?
The maximum operating junction temperature is 150 °C.
- Is the MJB44H11T4-A transistor AEC-Q101 qualified?
Yes, the MJB44H11T4-A transistor is AEC-Q101 qualified.
- What are the typical applications of the MJB44H11T4-A transistor?
The typical applications include power amplifiers and switching circuits.
- What is the minimum DC current gain (hFE) of the MJB44H11T4-A transistor?
The minimum DC current gain (hFE) is 40.
- What is the thermal resistance junction-case (RthJC) of the MJB44H11T4-A transistor?
The thermal resistance junction-case (RthJC) is 2.5 °C/W.
- What is the maximum power dissipation of the MJB44H11T4-A transistor?
The maximum power dissipation is 50 W.
- What are the dimensions of the MJB44H11T4-A transistor package?
The dimensions are 10.4 x 9.35 x 4.37 mm.
