BU508AF
  • Share:

STMicroelectronics BU508AF

Manufacturer No:
BU508AF
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 700V 8A TO3PF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BU508AF is a high-voltage NPN power transistor manufactured by STMicroelectronics. It is designed for use in standard definition CRT (Cathode Ray Tube) displays and other high-voltage applications. The transistor is built using diffused collector in planar technology, which enhances its performance and reliability in high-voltage environments.

Key Specifications

Parameter Value Unit
Polarity NPN
Type Power Transistor
Collector-Emitter Voltage (VCEO) 700 V
Collector Current Max (IC) 8 A
Power Dissipation (PTOT) 50 W
DC Current Gain (hFE) Min. 5
Collector-Base Voltage (VEBO) 9 V
Base Current (IB) 4 A
Insulation Withstand Voltage 2500 V (RMS)
Storage Temperature (Tstg) -65 to 150 °C
Max. Operating Junction Temperature (TJ) 150 °C

Key Features

  • State-of-the-art technology: Diffused collector “Enhanced generation”
  • Stable performances versus operating temperature variation
  • Low base-drive requirement
  • Tight hFE range at operating collector current
  • High ruggedness
  • Fully insulated power package, U.L. compliant

Applications

  • Horizontal deflection output for CRT TV
  • Switch mode power supplies for CRT TV

Q & A

  1. What is the BU508AF transistor used for?

    The BU508AF is used for horizontal deflection output in CRT TVs and switch mode power supplies for CRT TVs.

  2. What is the maximum collector-emitter voltage of the BU508AF?

    The maximum collector-emitter voltage (VCEO) is 700 V.

  3. What is the maximum collector current of the BU508AF?

    The maximum collector current (IC) is 8 A.

  4. What is the power dissipation of the BU508AF?

    The total power dissipation (PTOT) is 50 W.

  5. What is the DC current gain (hFE) of the BU508AF?

    The minimum DC current gain (hFE) is 5.

  6. What is the storage temperature range for the BU508AF?

    The storage temperature range (Tstg) is -65 to 150 °C.

  7. What is the maximum operating junction temperature of the BU508AF?

    The maximum operating junction temperature (TJ) is 150 °C.

  8. What technology is used in the manufacture of the BU508AF?

    The BU508AF is manufactured using diffused collector in planar technology.

  9. Is the BU508AF package fully insulated?

    Yes, the BU508AF has a fully insulated power package that is U.L. compliant.

  10. What is the package type of the BU508AF?

    The BU508AF is available in an ISOWATT218FX package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):700 V
Vce Saturation (Max) @ Ib, Ic:1V @ 1.6A, 4.5A
Current - Collector Cutoff (Max):200µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 100mA, 5V
Power - Max:50 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3 Full Pack
Supplier Device Package:TO-3PF
0 Remaining View Similar

In Stock

$3.12
125

Please send RFQ , we will respond immediately.

Similar Products

Part Number BU508AF BU508AW BU508AFI BU508A
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics Motorola
Product Status Active Active Obsolete Obsolete
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 8 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 700 V 700 V 700 V 700 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1.6A, 4.5A 1V @ 1.6A, 4.5A 1V @ 2A, 4.5A 1V @ 2A, 4.5A
Current - Collector Cutoff (Max) 200µA 200µA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 100mA, 5V 10 @ 100mA, 5V - -
Power - Max 50 W 125 W 50 W 125 W
Frequency - Transition - - 7MHz 7MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-3P-3 Full Pack TO-247-3 ISOWATT-218-3 TO-247-3
Supplier Device Package TO-3PF TO-247-3 ISOWATT-218FX TO-247-3

Related Product By Categories

BC33725BU
BC33725BU
onsemi
TRANS NPN 45V 0.8A TO92-3
TIP142T
TIP142T
STMicroelectronics
TRANS NPN DARL 100V 10A TO220
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847AMB,315
BC847AMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
MMBT2907ALT1G
MMBT2907ALT1G
onsemi
TRANS PNP 60V 0.6A SOT23-3
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24