BU508AF
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STMicroelectronics BU508AF

Manufacturer No:
BU508AF
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 700V 8A TO3PF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BU508AF is a high-voltage NPN power transistor manufactured by STMicroelectronics. It is designed for use in standard definition CRT (Cathode Ray Tube) displays and other high-voltage applications. The transistor is built using diffused collector in planar technology, which enhances its performance and reliability in high-voltage environments.

Key Specifications

Parameter Value Unit
Polarity NPN
Type Power Transistor
Collector-Emitter Voltage (VCEO) 700 V
Collector Current Max (IC) 8 A
Power Dissipation (PTOT) 50 W
DC Current Gain (hFE) Min. 5
Collector-Base Voltage (VEBO) 9 V
Base Current (IB) 4 A
Insulation Withstand Voltage 2500 V (RMS)
Storage Temperature (Tstg) -65 to 150 °C
Max. Operating Junction Temperature (TJ) 150 °C

Key Features

  • State-of-the-art technology: Diffused collector “Enhanced generation”
  • Stable performances versus operating temperature variation
  • Low base-drive requirement
  • Tight hFE range at operating collector current
  • High ruggedness
  • Fully insulated power package, U.L. compliant

Applications

  • Horizontal deflection output for CRT TV
  • Switch mode power supplies for CRT TV

Q & A

  1. What is the BU508AF transistor used for?

    The BU508AF is used for horizontal deflection output in CRT TVs and switch mode power supplies for CRT TVs.

  2. What is the maximum collector-emitter voltage of the BU508AF?

    The maximum collector-emitter voltage (VCEO) is 700 V.

  3. What is the maximum collector current of the BU508AF?

    The maximum collector current (IC) is 8 A.

  4. What is the power dissipation of the BU508AF?

    The total power dissipation (PTOT) is 50 W.

  5. What is the DC current gain (hFE) of the BU508AF?

    The minimum DC current gain (hFE) is 5.

  6. What is the storage temperature range for the BU508AF?

    The storage temperature range (Tstg) is -65 to 150 °C.

  7. What is the maximum operating junction temperature of the BU508AF?

    The maximum operating junction temperature (TJ) is 150 °C.

  8. What technology is used in the manufacture of the BU508AF?

    The BU508AF is manufactured using diffused collector in planar technology.

  9. Is the BU508AF package fully insulated?

    Yes, the BU508AF has a fully insulated power package that is U.L. compliant.

  10. What is the package type of the BU508AF?

    The BU508AF is available in an ISOWATT218FX package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):700 V
Vce Saturation (Max) @ Ib, Ic:1V @ 1.6A, 4.5A
Current - Collector Cutoff (Max):200µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 100mA, 5V
Power - Max:50 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3 Full Pack
Supplier Device Package:TO-3PF
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Similar Products

Part Number BU508AF BU508AW BU508AFI BU508A
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics Motorola
Product Status Active Active Obsolete Obsolete
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 8 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 700 V 700 V 700 V 700 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1.6A, 4.5A 1V @ 1.6A, 4.5A 1V @ 2A, 4.5A 1V @ 2A, 4.5A
Current - Collector Cutoff (Max) 200µA 200µA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 100mA, 5V 10 @ 100mA, 5V - -
Power - Max 50 W 125 W 50 W 125 W
Frequency - Transition - - 7MHz 7MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-3P-3 Full Pack TO-247-3 ISOWATT-218-3 TO-247-3
Supplier Device Package TO-3PF TO-247-3 ISOWATT-218FX TO-247-3

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