BU508AFI
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STMicroelectronics BU508AFI

Manufacturer No:
BU508AFI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 700V 8A ISOWATT-218FX
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BU508AFI is a high-voltage NPN power transistor manufactured by STMicroelectronics. It is designed using advanced diffused collector technology in planar structure, enhancing its performance for high-voltage applications. This transistor is particularly suited for use in horizontal deflection stages of standard definition CRT (Cathode Ray Tube) displays and other high-voltage switching applications. The BU508AFI offers stable performance over a wide range of operating temperatures and features low base-drive requirements, making it a reliable choice for demanding applications.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage (VBE = 0) VCES 1500 V
Collector-emitter voltage (IB = 0) VCEO 700 V
Collector-base voltage (IC = 0) VEBO 9 V
Collector current IC 8 A
Collector peak current (tP < 5ms) ICM 15 A
Base current IB 4 A
Total dissipation at Tc = 25°C PTOT 50 W
Insulation withstand voltage (RMS) from all three leads to external heatsink Vins 2500 V
Storage temperature Tstg -65 to 150 °C
Max. operating junction temperature TJ 150 °C
Thermal resistance junction-case Rthj-case 2.5 °C/W

Key Features

  • State-of-the-art technology using diffused collector in planar structure.
  • Stable performances versus operating temperature variation.
  • Low base-drive requirement.
  • Tight hFE range at operating collector current.
  • High ruggedness.
  • Fully insulated power package, U.L. compliant.
  • ECOPACK® packages with Lead-free second level interconnect.

Applications

  • Horizontal deflection output for CRT TV.
  • Switch mode power supplies for CRT TV.

Q & A

  1. What is the maximum collector-emitter voltage of the BU508AFI transistor?

    The maximum collector-emitter voltage (VCEO) is 700 V.

  2. What is the maximum collector current of the BU508AFI transistor?

    The maximum collector current (IC) is 8 A.

  3. What is the thermal resistance junction-case of the BU508AFI transistor?

    The thermal resistance junction-case (Rthj-case) is 2.5 °C/W.

  4. What are the typical applications of the BU508AFI transistor?

    The BU508AFI is typically used in horizontal deflection output for CRT TV and switch mode power supplies for CRT TV.

  5. Is the BU508AFI transistor still in production?

    No, the BU508AFI is no longer manufactured.

  6. What is the maximum operating junction temperature of the BU508AFI transistor?

    The maximum operating junction temperature (TJ) is 150 °C.

  7. What is the insulation withstand voltage of the BU508AFI transistor?

    The insulation withstand voltage (Vins) is 2500 V RMS from all three leads to the external heatsink.

  8. What technology is used in the manufacturing of the BU508AFI transistor?

    The BU508AFI is manufactured using diffused collector technology in planar structure.

  9. Is the BU508AFI transistor compliant with any specific standards?

    Yes, it is fully insulated and U.L. compliant.

  10. What is the storage temperature range for the BU508AFI transistor?

    The storage temperature range is -65 to 150 °C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):700 V
Vce Saturation (Max) @ Ib, Ic:1V @ 2A, 4.5A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:50 W
Frequency - Transition:7MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:ISOWATT-218-3
Supplier Device Package:ISOWATT-218FX
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Similar Products

Part Number BU508AFI BU508AF
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 700 V 700 V
Vce Saturation (Max) @ Ib, Ic 1V @ 2A, 4.5A 1V @ 1.6A, 4.5A
Current - Collector Cutoff (Max) 1mA 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce - 10 @ 100mA, 5V
Power - Max 50 W 50 W
Frequency - Transition 7MHz -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case ISOWATT-218-3 TO-3P-3 Full Pack
Supplier Device Package ISOWATT-218FX TO-3PF

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