BU508AW
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STMicroelectronics BU508AW

Manufacturer No:
BU508AW
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 700V 8A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BU508AW is a high-voltage NPN power transistor manufactured by STMicroelectronics. It is produced using diffused collector in planar technology, incorporating an enhanced high voltage structure to improve performance. This transistor is designed for high-speed switching applications, particularly in environments requiring robust voltage handling and current capacity.

Key Specifications

ParameterValue
Transistor TypeNPN
Maximum DC Collector Current (Ic)8 A (15 A peak)
Voltage - Collector Emitter Breakdown (Max)700 V
TechnologySilicon (Si)
Mounting StyleThrough Hole
Package / CaseTO-247-3

Key Features

  • High voltage capability up to 700 V, making it suitable for applications requiring high voltage handling.
  • High-speed switching performance, ideal for applications needing rapid switching times.
  • Maximum DC collector current of 8 A, with a peak current capacity of 15 A.
  • TO-247-3 package, a through-hole mounting style, which is convenient for various board designs.

Applications

The BU508AW is primarily used in high-voltage and high-speed switching applications. Key use cases include:

  • Horizontal deflection circuits in color television receivers.
  • Other high-voltage switching applications such as in power supplies, motor control, and industrial automation.

Q & A

  1. What is the maximum collector current of the BU508AW? The maximum DC collector current is 8 A, with a peak current capacity of 15 A.
  2. What is the maximum collector-emitter breakdown voltage of the BU508AW? The maximum collector-emitter breakdown voltage is 700 V.
  3. What is the transistor type of the BU508AW? The BU508AW is an NPN transistor.
  4. What is the package type of the BU508AW? The BU508AW comes in a TO-247-3 package.
  5. What are the primary applications of the BU508AW? The primary applications include horizontal deflection circuits in color television receivers and other high-voltage switching applications.
  6. What technology is used in the manufacturing of the BU508AW? The BU508AW is manufactured using silicon (Si) technology.
  7. What is the mounting style of the BU508AW? The BU508AW has a through-hole mounting style.
  8. Is the BU508AW suitable for high-speed switching? Yes, the BU508AW is designed for high-speed switching applications.
  9. What is the part status of the BU508AW? The BU508AW is an active part.
  10. Where can I find detailed specifications for the BU508AW? Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor sites like Digi-Key and Mouser Electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):700 V
Vce Saturation (Max) @ Ib, Ic:1V @ 1.6A, 4.5A
Current - Collector Cutoff (Max):200µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 100mA, 5V
Power - Max:125 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number BU508AW BU508A BU508AF
Manufacturer STMicroelectronics Motorola STMicroelectronics
Product Status Active Obsolete Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 700 V 700 V 700 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1.6A, 4.5A 1V @ 2A, 4.5A 1V @ 1.6A, 4.5A
Current - Collector Cutoff (Max) 200µA 1mA 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 100mA, 5V - 10 @ 100mA, 5V
Power - Max 125 W 125 W 50 W
Frequency - Transition - 7MHz -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-3P-3 Full Pack
Supplier Device Package TO-247-3 TO-247-3 TO-3PF

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