2STBN15D100
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STMicroelectronics 2STBN15D100

Manufacturer No:
2STBN15D100
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TRANS NPN DARL 100V 12A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2STBN15D100 is a low voltage NPN power Darlington transistor manufactured by STMicroelectronics. This device is produced using planar technology with a 'base island' layout and a monolithic Darlington configuration. It features an integrated antiparallel collector-emitter diode, making it suitable for various industrial applications. The transistor is packaged in a D²PAK (TO-263) package, which is available in tape and reel packaging for convenient use in high-volume production environments.

Key Specifications

Parameter Value Unit
Collector-base voltage (VCBO) 100 V
Collector-emitter voltage (VCEO) 100 V
Emitter-base voltage (VEBO) 5 V
Collector current (IC) 12 A
Collector peak current (ICM) 15 A
Base current (IB) 0.2 A
Total dissipation at Tcase = 25 °C (PTOT) 70 W
Storage temperature (TSTG) -65 to 150 °C
Max. operating junction temperature (TJ) 150 °C
Thermal resistance junction-case (RthJC) 1.8 °C/W
Collector-emitter saturation voltage (VCE(sat)) 1.3 - 1.5 V
Base-emitter on voltage (VBE(on)) 2.5 V
DC current gain (hFE) 750

Key Features

  • Good hFE linearity
  • High fT frequency
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode

Applications

The 2STBN15D100 is primarily used in linear and switching industrial equipment. Its robust design and high performance make it suitable for a variety of industrial applications where reliable and efficient power handling is crucial.

Q & A

  1. What is the collector-base voltage rating of the 2STBN15D100? The collector-base voltage (VCBO) is rated at 100 V.
  2. What is the maximum collector current of the 2STBN15D100? The maximum collector current (IC) is 12 A, with a peak current (ICM) of 15 A.
  3. What is the thermal resistance junction-case of the 2STBN15D100? The thermal resistance junction-case (RthJC) is 1.8 °C/W.
  4. What is the storage temperature range for the 2STBN15D100? The storage temperature range (TSTG) is -65 to 150 °C.
  5. What is the maximum operating junction temperature of the 2STBN15D100? The maximum operating junction temperature (TJ) is 150 °C.
  6. What package type is the 2STBN15D100 available in? The 2STBN15D100 is available in a D²PAK (TO-263) package.
  7. What are the key features of the 2STBN15D100? Key features include good hFE linearity, high fT frequency, and a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode.
  8. What are the typical applications of the 2STBN15D100? The 2STBN15D100 is used in linear and switching industrial equipment.
  9. Is the 2STBN15D100 RoHS compliant? Yes, the 2STBN15D100 is RoHS compliant and comes in an Ecopack2 package.
  10. Where can I find additional resources and CAD models for the 2STBN15D100? Additional resources, including EDA symbols, footprints, and 3D models, can be found on the STMicroelectronics website.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):12 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.3V @ 4mA, 4A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
Power - Max:70 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
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2STBN15D100
2STBN15D100
TRANS NPN DARL 100V 12A D2PAK

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