2SK1340-E
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Renesas Electronics America Inc 2SK1340-E

Manufacturer No:
2SK1340-E
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Description:
MOSFET N-CH 900V 5A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SK1340-E is a silicon N-channel power MOSFET produced by Renesas Electronics Corporation. This device is designed for high-power applications, offering a robust set of specifications that make it suitable for various industrial and automotive uses. With its high voltage and current ratings, the 2SK1340-E is a reliable choice for systems requiring efficient power management.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 900 V
ID (Drain Current) 5 A
RDS(ON) (On-Resistance) 4000
VGS(TH) (Gate-Source Threshold Voltage) 2.0 - 4.0 V
PD (Power Dissipation) 150 W
TJ (Junction Temperature) -55 to 150 °C
Package TO-3P -

Key Features

  • High Voltage and Current Ratings: The 2SK1340-E can handle up to 900V drain-source voltage and 5A drain current, making it suitable for high-power applications.
  • Low On-Resistance: With an on-resistance of 4000 mΩ, this MOSFET minimizes power losses during operation.
  • High Power Dissipation: The device can dissipate up to 150W, ensuring reliable performance in demanding environments.
  • Wide Operating Temperature Range: The junction temperature range of -55°C to 150°C allows for use in a variety of thermal conditions.
  • TO-3P Package: The TO-3P package provides a robust and reliable physical structure for the MOSFET.

Applications

  • Automotive Systems: Suitable for use in automotive power systems, including motor control and power management.
  • Industrial Power Supplies: Can be used in high-power industrial power supplies and DC-DC converters.
  • Motor Control: Ideal for motor control applications due to its high current and voltage handling capabilities.
  • Power Management Systems: Used in various power management systems requiring efficient and reliable power switching.

Q & A

  1. What is the maximum drain-source voltage of the 2SK1340-E?

    The maximum drain-source voltage is 900V.

  2. What is the maximum drain current of the 2SK1340-E?

    The maximum drain current is 5A.

  3. What is the on-resistance of the 2SK1340-E?

    The on-resistance is 4000 mΩ.

  4. What is the power dissipation capability of the 2SK1340-E?

    The device can dissipate up to 150W.

  5. What is the operating junction temperature range of the 2SK1340-E?

    The operating junction temperature range is -55°C to 150°C.

  6. In what package is the 2SK1340-E available?

    The 2SK1340-E is available in the TO-3P package.

  7. What are some common applications for the 2SK1340-E?

    Common applications include automotive systems, industrial power supplies, motor control, and power management systems.

  8. Why is the 2SK1340-E suitable for high-power applications?

    It is suitable due to its high voltage and current ratings, low on-resistance, and high power dissipation capability.

  9. Where can I find detailed specifications for the 2SK1340-E?

    Detailed specifications can be found on the official Renesas website, as well as on distributor websites like Mouser and Digi-Key.

  10. What are the benefits of using the 2SK1340-E in motor control applications?

    The benefits include its ability to handle high currents and voltages, low on-resistance, and reliable performance over a wide temperature range.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number 2SK1340-E 2SK1341-E 2SK1342-E
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 6A (Ta) 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 3A, 10V 3Ohm @ 3A, 10V 1.6Ohm @ 4A, 10V
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 10 V 980 pF @ 10 V 1730 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 100W (Tc) 100W (Tc) 100W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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