TIP2955G
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onsemi TIP2955G

Manufacturer No:
TIP2955G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 60V 15A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The TIP2955G is a PNP power transistor manufactured by onsemi, designed for general-purpose switching and amplifier applications. It is part of a complementary pair with the NPN TIP3055G. These transistors are produced using epitaxial-base planar technology, making them suitable for a variety of applications including audio amplifiers, power linear, and switching circuits.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 Vdc
Collector-Emitter Voltage (VCER) 70 Vdc
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 7.0 Vdc
Collector Current (IC) 15 A
Base Current (IB) 7.0 A
Total Power Dissipation at Tc ≤ 25°C 90 W
Storage Temperature -65 to 150 °C
Max. Operating Junction Temperature 150 °C
Collector-Emitter Saturation Voltage (VCE(sat)) 1.1 Vdc (Max) @ IC = 4.0 A
DC Current Gain (hFE) 20-70 @ IC = 4.0 A

Key Features

  • Low collector-emitter saturation voltage (VCE(sat)) of 1.1 Vdc (Max) at IC = 4.0 A.
  • DC current gain (hFE) ranging from 20 to 70 at IC = 4.0 A.
  • Excellent Safe Operating Area (SOA) characteristics.
  • Pb-Free packaging, compliant with environmental regulations.
  • High total power dissipation of 90 W at Tc ≤ 25°C.

Applications

  • General-purpose switching and amplifier applications.
  • Audio amplifiers.
  • Power linear and switching circuits.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) for the TIP2955G?

    The maximum collector-emitter voltage (VCEO) for the TIP2955G is 60 Vdc.

  2. What is the typical collector-emitter saturation voltage (VCE(sat)) for the TIP2955G?

    The typical collector-emitter saturation voltage (VCE(sat)) is 1.1 Vdc at IC = 4.0 A.

  3. What is the range of DC current gain (hFE) for the TIP2955G?

    The DC current gain (hFE) ranges from 20 to 70 at IC = 4.0 A.

  4. What is the maximum collector current (IC) for the TIP2955G?

    The maximum collector current (IC) is 15 A.

  5. What is the maximum base current (IB) for the TIP2955G?

    The maximum base current (IB) is 7.0 A.

  6. What is the total power dissipation at Tc ≤ 25°C for the TIP2955G?

    The total power dissipation at Tc ≤ 25°C is 90 W.

  7. What are the storage and operating temperature ranges for the TIP2955G?

    The storage temperature range is -65 to 150°C, and the maximum operating junction temperature is 150°C.

  8. Is the TIP2955G Pb-Free?
  9. What are some common applications for the TIP2955G?
  10. What package types are available for the TIP2955G?

    The TIP2955G is available in TO-247 and previously in TO-218 packages (though TO-218 is no longer in production).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):15 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:3V @ 3.3A, 10A
Current - Collector Cutoff (Max):700µA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
Power - Max:90 W
Frequency - Transition:2.5MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Same Series
TIP3055G
TIP3055G
TRANS NPN 60V 15A TO247-3

Similar Products

Part Number TIP2955G TIP2955
Manufacturer onsemi STMicroelectronics
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A 3V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700µA 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V 20 @ 4A, 4V
Power - Max 90 W 90 W
Frequency - Transition 2.5MHz -
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3

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