Overview
The SBC847BWT1G-M02 is a Bipolar Junction Transistor (BJT) produced by onsemi. It is an NPN transistor designed for general-purpose applications, featuring a surface mount package in the SC-70-3 (SOT323) format. This transistor is known for its high frequency transition characteristics and moderate power handling capabilities, making it suitable for a variety of electronic circuits.
Key Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Mfr | onsemi | Transistor Type | NPN |
| Product Status | Obsolete | Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | Vce Saturation (Max) @ Ib, Ic | 600 mV @ 5 mA, 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2 mA, 5 V | Current - Collector Cutoff (Max) | 15 nA (ICBO) |
| Power - Max | 310 mW | Frequency - Transition | 300 MHz |
| Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Key Features
- High Frequency Transition: The SBC847BWT1G-M02 has a transition frequency of 300 MHz, making it suitable for high-frequency applications.
- Low Power Consumption: With a maximum power dissipation of 310 mW, this transistor is energy-efficient.
- Compact Package: The SC-70-3 (SOT323) package is small and ideal for space-constrained designs.
- High Temperature Tolerance: The transistor can operate up to a junction temperature of 150°C.
- General Purpose Use: It is versatile and can be used in various general-purpose amplifier and switching applications.
Applications
The SBC847BWT1G-M02 is suitable for a wide range of applications, including:
- Amplifier Circuits: It can be used in audio and signal amplification circuits due to its good current gain and low noise characteristics.
- Switching Circuits: Its high transition frequency and moderate power handling make it suitable for switching applications.
- Automotive Electronics: The high temperature tolerance makes it a good choice for automotive and industrial control systems.
- Consumer Electronics: It can be used in various consumer electronic devices requiring reliable and efficient transistor performance.
Q & A
- Q: What is the SBC847BWT1G-M02 transistor type?
A: The SBC847BWT1G-M02 is an NPN Bipolar Junction Transistor (BJT). - Q: What is the maximum collector current of the SBC847BWT1G-M02?
A: The maximum collector current is 100 mA. - Q: What is the collector-emitter breakdown voltage of the SBC847BWT1G-M02?
A: The collector-emitter breakdown voltage is 45 V. - Q: What is the transition frequency of the SBC847BWT1G-M02?
A: The transition frequency is 300 MHz. - Q: What is the operating temperature range of the SBC847BWT1G-M02?
A: The operating temperature range is up to 150°C (TJ). - Q: What package type does the SBC847BWT1G-M02 use?
A: It uses the SC-70-3 (SOT323) surface mount package. - Q: Is the SBC847BWT1G-M02 still in production?
A: The product is listed as obsolete. - Q: What is the DC current gain of the SBC847BWT1G-M02?
A: The DC current gain (hFE) is 200 at 2 mA and 5 V. - Q: How can I ensure the authenticity of the SBC847BWT1G-M02 from onsemi?
A: Ensure you purchase from authorized distributors or verify the supplier's credentials through onsemi's official channels. - Q: What is the warranty period for the SBC847BWT1G-M02?
A: Typically, it comes with a 1-year warranty from the distributor, but this may vary.
