NTP190N65S3HF
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onsemi NTP190N65S3HF

Manufacturer No:
NTP190N65S3HF
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 20A TO220-3
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The NTP190N65S3HF is a high-voltage, N-Channel power MOSFET from onsemi, part of their SUPERFET III and FRFET product lines. This device is designed for high-performance applications requiring robust electrical characteristics and reliability. It features a TO-220 package, making it suitable for a variety of power management and control systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Continuous Drain Current (Id)20 A
On-Resistance (Rds(on))190 mΩ
Maximum Junction Temperature (Tj)150°C
Maximum Gate-Source Voltage (Vgs)±20 V
Pulse Drain Current (Idp)≤ 10 A
Di/dt≤ 200 A/μs

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 190 mΩ, reducing power losses and improving efficiency.
  • High continuous drain current of 20 A, supporting demanding power requirements.
  • Robust di/dt capability of up to 200 A/μs, ensuring reliable operation under transient conditions.
  • TO-220 package for easy mounting and thermal management.

Applications

The NTP190N65S3HF is versatile and can be used in various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management systems.
  • Automotive and aerospace power electronics.
  • Renewable energy systems such as solar and wind power inverters.

Q & A

  1. What is the voltage rating of the NTP190N65S3HF MOSFET?
    The voltage rating of the NTP190N65S3HF MOSFET is 650 V.
  2. What is the continuous drain current of the NTP190N65S3HF?
    The continuous drain current of the NTP190N65S3HF is 20 A.
  3. What is the on-resistance (Rds(on)) of the NTP190N65S3HF?
    The on-resistance (Rds(on)) of the NTP190N65S3HF is 190 mΩ.
  4. What is the maximum junction temperature for the NTP190N65S3HF?
    The maximum junction temperature for the NTP190N65S3HF is 150°C.
  5. What package type is the NTP190N65S3HF available in?
    The NTP190N65S3HF is available in a TO-220 package.
  6. What are some typical applications for the NTP190N65S3HF?
    Typical applications include power supplies, motor control systems, industrial power management, automotive and aerospace power electronics, and renewable energy systems.
  7. What is the maximum gate-source voltage for the NTP190N65S3HF?
    The maximum gate-source voltage for the NTP190N65S3HF is ±20 V.
  8. What is the di/dt capability of the NTP190N65S3HF?
    The di/dt capability of the NTP190N65S3HF is up to 200 A/μs.
  9. Where can I find detailed specifications for the NTP190N65S3HF?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and Digi-Key.
  10. Is the NTP190N65S3HF suitable for high-power transient conditions?
    Yes, the NTP190N65S3HF is designed to handle high-power transient conditions with its robust di/dt capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1610 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):162W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number NTP190N65S3HF NTPF190N65S3HF NTP110N65S3HF NTP150N65S3HF
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc) 30A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V 190mOhm @ 10A, 10V 110mOhm @ 15A, 10V 150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 430µA 5V @ 430µA 5V @ 740µA 5V @ 540µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 34 nC @ 10 V 62 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 400 V 1610 pF @ 400 V 2635 pF @ 400 V 1985 pF @ 400 V
FET Feature - - - -
Power Dissipation (Max) 162W (Tc) 36W (Tc) 240W (Tc) 192W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220FP TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack TO-220-3 TO-220-3

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