Overview
The NTH027N65S3F-F155 is a high-performance N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device is designed with advanced super-junction (SJ) technology, utilizing charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. This results in minimized conduction loss, superior switching performance, and the ability to withstand extreme dv/dt rates. The MOSFET is particularly suited for various power systems requiring miniaturization and higher efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 650 | V |
| Gate to Source Voltage (VGSS) | ±30 | V |
| Continuous Drain Current (ID) | 75 | A |
| Pulsed Drain Current (IDM) | 187.5 | A |
| Drain to Source On-Resistance (RDS(on)) | 27.4 mΩ | mΩ |
| Gate Threshold Voltage (VGS(th)) | 3-5 | V |
| Typical Gate Charge (Qg) | 259 nC | nC |
| Maximum Power Dissipation (PD) | 595 W | W |
| Operating Temperature Range | -55 to +150 | °C |
| Package Type | TO-247 |
Key Features
- Ultra-low on-resistance (Typ. RDS(on) = 23 mΩ)
- Ultra-low gate charge (Typ. Qg = 259 nC)
- Low effective output capacitance (Typ. Coss(eff.) = 1972 pF)
- 100% avalanche tested
- Pb-free and RoHS compliant
- Optimized reverse recovery performance of body diode to remove additional components and improve system reliability
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- Electric Vehicle (EV) Chargers
- Uninterruptible Power Supplies (UPS) / Solar Systems
Q & A
- What is the maximum drain to source voltage of the NTH027N65S3F-F155 MOSFET?
The maximum drain to source voltage (VDSS) is 650 V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current (ID) is 75 A at TC = 25°C and 60 A at TC = 100°C.
- What is the typical on-resistance of the NTH027N65S3F-F155?
The typical on-resistance (RDS(on)) is 27.4 mΩ.
- What is the gate threshold voltage range for this MOSFET?
The gate threshold voltage (VGS(th)) range is 3-5 V.
- Is the NTH027N65S3F-F155 Pb-free and RoHS compliant?
- What are the typical applications for the NTH027N65S3F-F155 MOSFET?
Typical applications include telecom/server power supplies, industrial power supplies, EV chargers, and UPS/solar systems.
- What is the maximum power dissipation of the NTH027N65S3F-F155?
The maximum power dissipation (PD) is 595 W at TC = 25°C.
- What is the operating temperature range for this MOSFET?
The operating temperature range is -55 to +150°C.
- What package type is the NTH027N65S3F-F155 available in?
The device is available in the TO-247 package type.
- What is the significance of the optimized reverse recovery performance of the body diode?
The optimized reverse recovery performance of the body diode helps remove additional components and improve system reliability.
