Overview
The NTDV3055L104T4G is a power MOSFET from onsemi, designed for low voltage, high-speed switching applications. This N-Channel, logic-level MOSFET is available in the DPAK package and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.
It features a low on-resistance (RDS(on)) of 104 mΩ, low drain-to-source on-voltage (VDS(on)), and tighter VSD specifications. The device is also characterized by lower diode reverse recovery time and lower reverse recovery stored charge, enhancing its performance in high-speed switching environments.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage | VDGR | 60 | Vdc |
| Gate-to-Source Voltage, Continuous | VGS | ±15 / ±20 | Vdc |
| Continuous Drain Current at TA = 25°C | ID | 12 | A |
| Continuous Drain Current at TA = 100°C | ID | 10 | A |
| Single Pulse Drain Current | IDM | 45 | A |
| Total Power Dissipation at TA = 25°C | PD | 48 | W |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Gate Threshold Voltage | VGS(th) | 1.0 to 1.6 | Vdc |
| Static Drain-to-Source On-Resistance | RDS(on) | 104 mΩ | mΩ |
Key Features
- Lower RDS(on) of 104 mΩ for reduced power losses.
- Lower VDS(on) for improved switching efficiency.
- Tighter VSD specifications for better performance consistency.
- Lower diode reverse recovery time and lower reverse recovery stored charge for faster switching.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other critical applications.
- Pb-free and RoHS compliant.
Applications
- Power Supplies: Ideal for high-efficiency power supply designs.
- Converters: Suitable for DC-DC converters and other power conversion applications.
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
- Bridge Circuits: Applicable in bridge configurations for high-power switching.
Q & A
- What is the maximum drain-to-source voltage of the NTDV3055L104T4G?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 12 A.
- What is the typical on-resistance (RDS(on)) of this MOSFET?
The typical on-resistance (RDS(on)) is 104 mΩ.
- Is the NTDV3055L104T4G suitable for automotive applications?
- What are the operating and storage temperature ranges for this device?
The operating and storage temperature range is −55 to +175°C.
- What is the gate threshold voltage range for this MOSFET?
The gate threshold voltage (VGS(th)) range is 1.0 to 1.6 Vdc.
- Is the NTDV3055L104T4G Pb-free and RoHS compliant?
- What are some typical applications for the NTDV3055L104T4G?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- What is the maximum total power dissipation at 25°C?
The maximum total power dissipation (PD) at 25°C is 48 W.
- What is the package type for the NTDV3055L104T4G?
The device is available in the DPAK package.
