NTB25P06T4G
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onsemi NTB25P06T4G

Manufacturer No:
NTB25P06T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 27.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTB25P06T4G is a high-performance P-Channel power MOSFET manufactured by onsemi. This device is packaged in a D2PAK (TO-263) surface mount package, making it suitable for a variety of power management and switching applications. The MOSFET is known for its low on-resistance and high current handling capabilities, making it an excellent choice for demanding power electronics designs.

Key Specifications

ParameterValue
Transistor TypeP-Channel MOSFET
Voltage Rating (Vds)-60 V
Current Rating (Id)-27.5 A
Power Dissipation (Pd)120 W
Package TypeD2PAK (TO-263)
Typical Turn-On Delay Time14 ns
Typical Turn-Off Delay Time43 ns

Key Features

  • Low on-resistance (Rds(on)) for efficient power handling
  • High current capability of -27.5 A
  • High voltage rating of -60 V
  • Compact D2PAK (TO-263) surface mount package
  • Fast switching times with typical turn-on and turn-off delay times of 14 ns and 43 ns, respectively
  • Pb-Free and RoHS compliant

Applications

The NTB25P06T4G is suitable for a wide range of applications including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switching regulators and inverters
  • Automotive and industrial power management systems
  • High-frequency switching applications

Q & A

  1. What is the voltage rating of the NTB25P06T4G MOSFET?
    The voltage rating (Vds) of the NTB25P06T4G is -60 V.
  2. What is the current rating of the NTB25P06T4G MOSFET?
    The current rating (Id) of the NTB25P06T4G is -27.5 A.
  3. What package type is the NTB25P06T4G available in?
    The NTB25P06T4G is available in a D2PAK (TO-263) surface mount package.
  4. What are the typical turn-on and turn-off delay times for the NTB25P06T4G?
    The typical turn-on delay time is 14 ns, and the typical turn-off delay time is 43 ns.
  5. Is the NTB25P06T4G Pb-Free and RoHS compliant?
    Yes, the NTB25P06T4G is Pb-Free and RoHS compliant.
  6. What are some common applications for the NTB25P06T4G?
    Common applications include power supplies, motor control systems, switching regulators, and automotive and industrial power management systems.
  7. What is the maximum power dissipation of the NTB25P06T4G?
    The maximum power dissipation (Pd) of the NTB25P06T4G is 120 W.
  8. Where can I find detailed specifications for the NTB25P06T4G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, Digi-Key, and TME.
  9. Is the NTB25P06T4G suitable for high-frequency switching applications?
    Yes, the NTB25P06T4G is suitable for high-frequency switching applications due to its fast switching times.
  10. What is the significance of the 'T4G' suffix in the part number?
    The 'T4G' suffix indicates the package type and lead-free status of the device.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:27.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:82mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):120W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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NVB25P06T4G
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Similar Products

Part Number NTB25P06T4G NTB25P06T4
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 27.5A (Ta) 27.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 82mOhm @ 25A, 10V 82mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±15V -
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 25 V 1680 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 120W (Tj) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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