Overview
The NSV1C300ET4G is a PNP transistor from onsemi's e2PowerEdge family, designed for low voltage, high speed switching applications. This surface mount device features ultra-low saturation voltage (VCE(sat)) and high current gain capability, making it ideal for efficient energy control in various electronic systems.
It is particularly suited for use in DC-DC converters, power management in portable and battery-powered products, and low voltage motor controls. The transistor is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Rating | Symbol | Max | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 140 | Vdc |
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Emitter-Base Voltage | VEB | 6.0 | Vdc |
| Collector Current - Continuous | IC | 3.0 | Adc |
| Collector Current - Peak | ICM | 6.0 | Adc |
| Base Current | IB | 0.5 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 33 | W |
| Total Power Dissipation @ TA = 25°C | PD | 2.1 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 3.8 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 59.5 | °C/W |
Key Features
- Ultra-low saturation voltage (VCE(sat))
- High current gain capability
- Surface mount device in DPAK package
- Pb-free and RoHS compliant
- AEC-Q101 qualified and PPAP capable for automotive and other applications
- Complement to NSV1C301ET4G-VF01
- High linear gain (Beta) suitable for analog amplifiers
Applications
- DC-DC converters
- Power management in portable and battery-powered products (cellular and cordless phones, PDAs, computers, printers, digital cameras, MP3 players)
- Low voltage motor controls in mass storage products (disc drives, tape drives)
- Automotive industry applications (air bag deployment, instrument cluster)
Q & A
- What is the maximum collector-emitter voltage of the NSV1C300ET4G transistor?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the continuous collector current rating of the NSV1C300ET4G transistor?
The continuous collector current (IC) is 3.0 Adc.
- What is the thermal resistance from junction to case for the NSV1C300ET4G transistor?
The thermal resistance from junction to case (RJC) is 3.8 °C/W.
- Is the NSV1C300ET4G transistor RoHS compliant?
Yes, the NSV1C300ET4G transistor is Pb-free and RoHS compliant.
- What are the typical applications of the NSV1C300ET4G transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.
- What is the operating and storage junction temperature range for the NSV1C300ET4G transistor?
The operating and storage junction temperature range is -65 to +150 °C.
- What is the cutoff frequency of the NSV1C300ET4G transistor?
The cutoff frequency (fT) is 100 MHz.
- Is the NSV1C300ET4G transistor AEC-Q101 qualified?
Yes, the NSV1C300ET4G transistor is AEC-Q101 qualified and PPAP capable.
- What is the base-emitter saturation voltage of the NSV1C300ET4G transistor?
The base-emitter saturation voltage (VBE(sat)) is typically -1.0 V.
- What package type is the NSV1C300ET4G transistor available in?
The NSV1C300ET4G transistor is available in a DPAK package.
