NSS1C300ET4G
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onsemi NSS1C300ET4G

Manufacturer No:
NSS1C300ET4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 100V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSS1C300ET4G is a PNP bipolar junction transistor (BJT) from onsemi's e2PowerEdge family. This surface mount device is designed for low voltage, high speed switching applications, featuring ultra-low saturation voltage (VCE(sat)) and high current gain capability. It is particularly suited for efficient energy control in various electronic systems.

Key Specifications

Rating Symbol Max Unit
Collector-Base Voltage VCBO 140 Vdc
Collector-Emitter Voltage VCEO 100 Vdc
Emitter-Base Voltage VEB 6.0 Vdc
Collector Current - Continuous IC 3.0 Adc
Collector Current - Peak ICM 6.0 Adc
Base Current IB 0.5 Adc
Total Power Dissipation @ TC = 25°C PD 2.1 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C
Transition Frequency ft 100 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce hFE 120 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic VCE(sat) 400mV @ 300mA, 3A
Package TO-252-3, DPAK (2 Leads + Tab), SC-63

Key Features

  • Ultra-low saturation voltage (VCE(sat)) for efficient energy control.
  • High current gain capability.
  • Pb-free and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Ideal for analog amplifiers due to linear gain (Beta).
  • Surface mount package (TO-252-3, DPAK) for easy integration into modern designs.

Applications

The NSS1C300ET4G is used in a variety of applications including:

  • DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
  • Low voltage motor controls in mass storage products like disc drives and tape drives.
  • Automotive industry applications including air bag deployment and instrument clusters.

Q & A

  1. What is the maximum collector-emitter voltage of the NSS1C300ET4G?

    The maximum collector-emitter voltage (VCEO) is 100 Vdc.

  2. What is the continuous collector current rating of the NSS1C300ET4G?

    The continuous collector current (IC) is 3.0 Adc.

  3. What is the operating temperature range of the NSS1C300ET4G?

    The operating and storage junction temperature range is -65°C to +150°C.

  4. Is the NSS1C300ET4G RoHS compliant?

    Yes, the NSS1C300ET4G is Pb-free and RoHS compliant.

  5. What is the transition frequency of the NSS1C300ET4G?

    The transition frequency (ft) is 100 MHz.

  6. What is the typical DC current gain (hFE) of the NSS1C300ET4G?

    The minimum DC current gain (hFE) is 120 at IC = 1A and VCE = 2V.

  7. What is the maximum Vce saturation voltage of the NSS1C300ET4G?

    The maximum Vce saturation voltage is 400mV at Ib = 300mA and Ic = 3A.

  8. In what package is the NSS1C300ET4G available?

    The NSS1C300ET4G is available in TO-252-3, DPAK (2 Leads + Tab), and SC-63 packages.

  9. Is the NSS1C300ET4G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

  10. What are some typical applications of the NSS1C300ET4G?

    Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive systems such as air bag deployment and instrument clusters.[

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1A, 2V
Power - Max:2.1 W
Frequency - Transition:100MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Same Series
NSS1C300ET4G
NSS1C300ET4G
TRANS PNP 100V 3A DPAK

Similar Products

Part Number NSS1C300ET4G NSS1C301ET4G NSV1C300ET4G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type PNP NPN PNP
Current - Collector (Ic) (Max) 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 300mA, 3A 250mV @ 300mA, 3A 400mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 2V 120 @ 1A, 2V 120 @ 1A, 2V
Power - Max 2.1 W 2.1 W 2.1 W
Frequency - Transition 100MHz 120MHz 100MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK

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