NSS1C301ET4G
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onsemi NSS1C301ET4G

Manufacturer No:
NSS1C301ET4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSS1C301ET4G is a high-performance NPN transistor from ON Semiconductor, part of the e2PowerEdge family. This surface mount device is designed for applications requiring low VCE(sat) and features ultra-low saturation voltage and high current gain capability. It is particularly suited for low voltage, high-speed switching applications where efficient energy control is crucial. The transistor is Pb-free and RoHS compliant, making it suitable for a wide range of industries including automotive, industrial, and consumer electronics.

Key Specifications

Parameter Symbol Max Unit
Collector-Base Voltage VCBO 140 Vdc
Collector-Emitter Voltage VCEO 100 Vdc
Emitter-Base Voltage VEB 6.0 Vdc
Collector Current - Continuous IC 3.0 Adc
Collector Current - Peak ICM 6.0 Adc
Base Current IB 0.5 Adc
Total Power Dissipation @ TC = 25°C PD 2.1 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C
Package Type DPAK (TO-252-3)

Key Features

  • Pb-free and RoHS compliant, ensuring environmental compatibility and reduced hazardous substances.
  • AEC-Q101 qualified, meeting industry standards for reliability in automotive components.
  • NSV prefix for automotive and other applications requiring unique site and control change requirements.
  • Ultra-low saturation voltage (VCE(sat)) and high current gain capability.
  • Designed for high-temperature and high-performance operations.
  • Suitable for industrial, commercial, and residential uses, meeting or exceeding all relevant industry and government regulations.

Applications

The NSS1C301ET4G is designed for various applications, including:

  • Low voltage, high-speed switching applications such as DC-DC converters and power management in portable and battery-powered products (cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players).
  • Low voltage motor controls in mass storage products like disc drives and tape drives.
  • Automotive applications, including air bag deployment and instrument cluster systems.
  • Analog amplifiers due to its high current gain and linear gain (Beta).

Q & A

  1. What is the maximum collector-emitter voltage of the NSS1C301ET4G?

    The maximum collector-emitter voltage (VCEO) is 100 Vdc.

  2. What is the continuous collector current rating of the NSS1C301ET4G?

    The continuous collector current (IC) is 3.0 Adc.

  3. Is the NSS1C301ET4G Pb-free and RoHS compliant?

    Yes, the NSS1C301ET4G is Pb-free and RoHS compliant.

  4. What is the operating temperature range of the NSS1C301ET4G?

    The operating and storage junction temperature range is -65 to +150 °C.

  5. What package type does the NSS1C301ET4G come in?

    The NSS1C301ET4G comes in a DPAK (TO-252-3) package.

  6. Is the NSS1C301ET4G AEC-Q101 qualified?

    Yes, the NSS1C301ET4G is AEC-Q101 qualified, meeting industry standards for reliability in automotive components.

  7. What are some typical applications of the NSS1C301ET4G?

    Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive systems such as air bag deployment and instrument clusters).

  8. Can the NSS1C301ET4G be used in analog amplifiers?

    Yes, the NSS1C301ET4G can be used in analog amplifiers due to its high current gain and linear gain (Beta)).

  9. What is the maximum base current of the NSS1C301ET4G?

    The maximum base current (IB) is 0.5 Adc).

  10. What is the total power dissipation of the NSS1C301ET4G at TC = 25°C?

    The total power dissipation (PD) at TC = 25°C is 2.1 W).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1A, 2V
Power - Max:2.1 W
Frequency - Transition:120MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Same Series
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
TRANS NPN 100V 3A DPAK

Similar Products

Part Number NSS1C301ET4G NSV1C301ET4G NSS1C300ET4G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300mA, 3A 250mV @ 300mA, 3A 400mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 2V 200 @ 500mA, 2V 120 @ 1A, 2V
Power - Max 2.1 W 2.1 W 2.1 W
Frequency - Transition 120MHz 120MHz 100MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK

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