NS2029M3T5G
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onsemi NS2029M3T5G

Manufacturer No:
NS2029M3T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 50V 0.1A SOT723
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NS2029M3T5G is a PNP silicon general-purpose amplifier transistor manufactured by ON Semiconductor. This transistor is designed for a wide range of general-purpose amplifier applications and is housed in the SOT-723 package, which is optimized for low power consumption and compact design.

Key Specifications

ParameterValue
Transistor TypePNP
PackageSOT-723
Collector-Base Voltage (Vcbo)50 V
Collector-Emitter Voltage (Vceo)50 V
Emitter-Base Voltage (Vebo)5 V
Collector Current (Ic)500 mA
Base Current (Ib)50 mA
Power Dissipation (Pd)350 mW
Operating Temperature Range-55°C to 150°C

Key Features

  • General-purpose amplifier transistor suitable for a variety of applications.
  • Compact SOT-723 package for space-saving designs.
  • Low power consumption.
  • High collector current and base current capabilities.
  • Wide operating temperature range.

Applications

  • General-purpose amplification in electronic circuits.
  • Audio amplifiers.
  • Switching circuits.
  • Automotive and industrial control systems.
  • Consumer electronics.

Q & A

  1. What is the transistor type of the NS2029M3T5G?
    The NS2029M3T5G is a PNP silicon transistor.
  2. What package is the NS2029M3T5G housed in?
    The NS2029M3T5G is housed in the SOT-723 package.
  3. What is the maximum collector current of the NS2029M3T5G?
    The maximum collector current is 500 mA.
  4. What is the operating temperature range of the NS2029M3T5G?
    The operating temperature range is -55°C to 150°C.
  5. What are some common applications of the NS2029M3T5G?
    Common applications include general-purpose amplification, audio amplifiers, switching circuits, automotive and industrial control systems, and consumer electronics.
  6. What is the maximum power dissipation of the NS2029M3T5G?
    The maximum power dissipation is 350 mW.
  7. What is the collector-base voltage (Vcbo) of the NS2029M3T5G?
    The collector-base voltage (Vcbo) is 50 V.
  8. What is the emitter-base voltage (Vebo) of the NS2029M3T5G?
    The emitter-base voltage (Vebo) is 5 V.
  9. Who is the manufacturer of the NS2029M3T5G?
    The manufacturer is ON Semiconductor.
  10. Where can I find detailed specifications for the NS2029M3T5G?
    Detailed specifications can be found in the datasheet available on the ON Semiconductor website or through distributors like Mouser Electronics.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
Power - Max:265 mW
Frequency - Transition:140MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:SOT-723
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