NRVUA210VT3G-GA01
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onsemi NRVUA210VT3G-GA01

Manufacturer No:
NRVUA210VT3G-GA01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVUA210VT3G-GA01 is a power rectifier diode produced by onsemi, designed for high-performance applications requiring ultra-fast recovery times. This diode is part of the SMA (DO-214AC) package family and is suited for high voltage, high frequency rectification, as well as for use as free-wheeling and protection diodes in surface mount applications where compact size and weight are critical.

It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications that require unique site and control change requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Working Peak Reverse Voltage VRWM 100 V
DC Blocking Voltage VR 100 V
Average Rectified Forward Current @ TL = 155°C IF(AV) 1.0 A
Average Rectified Forward Current @ TL = 135°C IF(AV) 2.0 A
Non-Repetitive Peak Surge Current IFSM 50 A
Operating Junction Temperature Range TJ −65 to +175 °C
Maximum Instantaneous Forward Voltage @ IF = 2.0 A, TJ = 25°C vF 0.94 V
Maximum Instantaneous Forward Voltage @ IF = 2.0 A, TJ = 150°C vF 0.74 V
Maximum Reverse Recovery Time trr 30 ns

Key Features

  • Small compact surface mountable package with J-bend leads, ideal for automated handling.
  • High temperature glass passivated junction for enhanced reliability.
  • Low forward voltage drop (0.74 V Max @ 2.0 A, TJ = 150°C) for efficient operation.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other critical applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • ESD protection: Human Body Model > 4000 V (Class 3) and Charged Device Model > 1000 V.
  • Corrosion-resistant external surfaces and readily solderable terminal leads.

Applications

The NRVUA210VT3G-GA01 is ideally suited for various high-performance applications, including:

  • High voltage, high frequency rectification.
  • Free-wheeling and protection diodes in surface mount applications.
  • Automotive systems requiring AEC-Q101 qualification.
  • Industrial power supplies and DC-DC converters.
  • Switch-mode power supplies and motor control circuits.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVUA210VT3G-GA01?

    The peak repetitive reverse voltage (VRRM) is 100 V.

  2. What is the average rectified forward current at TL = 155°C?

    The average rectified forward current (IF(AV)) at TL = 155°C is 1.0 A.

  3. What is the maximum instantaneous forward voltage at IF = 2.0 A and TJ = 25°C?

    The maximum instantaneous forward voltage (vF) at IF = 2.0 A and TJ = 25°C is 0.94 V.

  4. Is the NRVUA210VT3G-GA01 RoHS compliant?
  5. What is the operating junction temperature range of the NRVUA210VT3G-GA01?

    The operating junction temperature range is −65 to +175°C.

  6. What is the maximum reverse recovery time of the NRVUA210VT3G-GA01?

    The maximum reverse recovery time (trr) is 30 ns.

  7. Does the NRVUA210VT3G-GA01 have ESD protection? 4000 V (Class 3) and Charged Device Model > 1000 V.

  8. What are the typical applications of the NRVUA210VT3G-GA01?
  9. Is the NRVUA210VT3G-GA01 AEC-Q101 qualified?
  10. What is the package type of the NRVUA210VT3G-GA01?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:940 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:2 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 175°C
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