NRVBS2040LNT3G
  • Share:

onsemi NRVBS2040LNT3G

Manufacturer No:
NRVBS2040LNT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 2A 40V 1202 SMB2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVBS2040LNT3G is a surface mount Schottky power rectifier manufactured by onsemi. This component is designed using the Schottky Barrier principle in a metal-to-silicon power rectifier, featuring epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 40 V
Average Rectified Forward Current (At Rated VR, TC = 103°C) IO 2.0 A
Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 104°C) IFRM 4.0 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 70 A
Storage Temperature Tstg, TC −55 to +150 °C
Operating Junction Temperature TJ −55 to +125 °C
Maximum Instantaneous Forward Voltage (TJ = 25°C, IF = 2.0 A) VF 0.43 V
Thermal Resistance — Junction-to-Lead RθJL 22.5 °C/W
Thermal Resistance — Junction-to-Ambient RθJA 78 °C/W

Key Features

  • Compact Package with J-Bend Leads Ideal for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Guardring for Over-Voltage Protection
  • Low Forward Voltage Drop
  • ESD Ratings: Human Body Model = 3B (> 16000 V), Machine Model = C (> 400 V)
  • AEC-Q101 Qualified and PPAP Capable for Automotive and Other Applications
  • Pb-Free Device with Corrosion Resistant External Surfaces and Terminal Leads
  • Maximum Temperature of 260°C / 10 Seconds for Soldering

Applications

  • Low Voltage, High Frequency Switching Power Supplies
  • Free Wheeling Diodes
  • Polarity Protection Diodes
  • Automotive Applications Requiring AEC-Q101 Qualification
  • Other Applications Requiring High Reliability and Low Forward Voltage Drop

Q & A

  1. What is the peak repetitive reverse voltage of the NRVBS2040LNT3G?

    The peak repetitive reverse voltage is 40 V.

  2. What is the average rectified forward current at a junction temperature of 103°C?

    The average rectified forward current is 2.0 A.

  3. What is the maximum instantaneous forward voltage at 25°C and 2.0 A forward current?

    The maximum instantaneous forward voltage is 0.43 V.

  4. Is the NRVBS2040LNT3G Pb-free?
  5. What are the ESD ratings for the NRVBS2040LNT3G?

    The ESD ratings are Human Body Model = 3B (> 16000 V) and Machine Model = C (> 400 V).

  6. What is the operating junction temperature range for the NRVBS2040LNT3G?

    The operating junction temperature range is −55 to +125°C.

  7. Is the NRVBS2040LNT3G suitable for automotive applications?
  8. What is the thermal resistance from junction to ambient for the NRVBS2040LNT3G?

    The thermal resistance from junction to ambient is 78°C/W.

  9. What is the maximum non-repetitive peak surge current for the NRVBS2040LNT3G?

    The maximum non-repetitive peak surge current is 70 A.

  10. What is the storage temperature range for the NRVBS2040LNT3G?

    The storage temperature range is −55 to +150°C.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:430 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:800 µA @ 40 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

-
428

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NRVBS2040LNT3G NRVBS240LNT3G NRVBS2040LT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V
Current - Average Rectified (Io) 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 430 mV @ 2 A 430 mV @ 2 A 430 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 800 µA @ 40 V 2 mA @ 40 V 800 µA @ 40 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package SMB SMB SMB
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 150°C -55°C ~ 125°C

Related Product By Categories

STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223