Overview
The NRVBA1H100T3G is a surface mount Schottky power rectifier produced by onsemi. This component employs the Schottky Barrier principle in a large area metal-to-silicon power diode, making it ideal for low voltage, high frequency rectification, or as free wheeling and polarity diodes. The device is particularly suited for applications where compact size and weight are critical.
Key Specifications
Rating | Symbol | Value | Unit |
---|---|---|---|
Peak Repetitive Reverse Voltage | VRRM | 100 | V |
Average Rectified Forward Current (TL = 167°C) | IO | 1.0 | A |
Non-Repetitive Peak Surge Current | IFSM | 50 | A |
Storage and Operating Junction Temperature Range | Tstg, TJ | −65 to +175 | °C |
Maximum Instantaneous Forward Voltage (IF = 1.0 A, TJ = 25°C) | VF | 0.76 | V |
Maximum Instantaneous Reverse Current (Rated dc Voltage, TJ = 25°C) | IR | 40 µA | µA |
Thermal Resistance, Junction-to-Lead | θJL | 14 | °C/W |
Thermal Resistance, Junction-to-Ambient (6 mm2 pad) | θJA | 280 | °C/W |
ESD Ratings - Human Body Model | 3B | ||
Package Type | SMA-2 | ||
Mounting Type | Surface Mount | ||
AEC-Q101 Qualified | Yes |
Key Features
- Small, compact surface mountable package with J-bent leads.
- Rectangular package for automated handling.
- Highly stable oxide passivated junction.
- Low forward voltage drop.
- Guardring for stress protection.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Corrosion-resistant external surfaces and readily solderable terminal leads.
Applications
The NRVBA1H100T3G is ideally suited for various applications including:
- Low voltage, high frequency rectification.
- Free wheeling and polarity diodes in surface mount applications.
- Automotive systems requiring high reliability and compliance with AEC-Q101 standards.
- Compact electronic devices where size and weight are critical.
Q & A
- What is the peak repetitive reverse voltage of the NRVBA1H100T3G?
The peak repetitive reverse voltage (VRRM) is 100 V.
- What is the average rectified forward current of the NRVBA1H100T3G?
The average rectified forward current (IO) is 1.0 A at a temperature of 167°C.
- What is the non-repetitive peak surge current of the NRVBA1H100T3G?
The non-repetitive peak surge current (IFSM) is 50 A.
- What is the operating junction temperature range of the NRVBA1H100T3G?
The storage and operating junction temperature range is from −65°C to +175°C.
- What is the maximum instantaneous forward voltage of the NRVBA1H100T3G at 1.0 A and 25°C?
The maximum instantaneous forward voltage (VF) at 1.0 A and 25°C is 0.76 V.
- Is the NRVBA1H100T3G AEC-Q101 qualified?
Yes, the NRVBA1H100T3G is AEC-Q101 qualified.
- What is the thermal resistance, junction-to-ambient, for the NRVBA1H100T3G with a 6 mm2 pad?
The thermal resistance, junction-to-ambient (θJA), with a 6 mm2 pad is 280 °C/W.
- Is the NRVBA1H100T3G Pb-free and RoHS compliant?
Yes, the NRVBA1H100T3G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the ESD rating for the NRVBA1H100T3G according to the Human Body Model?
The ESD rating according to the Human Body Model is 3B.
- What type of package does the NRVBA1H100T3G use?
The NRVBA1H100T3G uses an SMA-2 package type.