Overview
The MBRA1H100T3G is a surface mount Schottky power rectifier produced by onsemi. This component employs the Schottky Barrier principle in a large area metal-to-silicon power diode, featuring state-of-the-art geometry with epitaxial construction and oxide passivation. It is ideally suited for low voltage, high frequency rectification, as well as for use as free-wheeling and polarity diodes in surface mount applications where compact size and weight are critical.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 100 | V |
| Average Rectified Forward Current (TL = 167°C) | IO | 1.0 | A |
| Non-Repetitive Peak Surge Current | IFSM | 50 | A |
| Storage and Operating Junction Temperature Range | Tstg, TJ | −65 to +175 | °C |
| Maximum Instantaneous Forward Voltage (IF = 1.0 A, TJ = 25°C) | VF | 0.76 | V |
| Maximum Instantaneous Reverse Current (Rated dc Voltage, TJ = 25°C) | IR | 40 μA | μA |
| Thermal Resistance, Junction-to-Lead | RθJL | 14 | °C/W |
| Thermal Resistance, Junction-to-Ambient (with 700 mm^2 copper pad) | RθJA | 75 | °C/W |
Key Features
- Small, compact surface mountable package with J-bent leads.
- Rectangular package for automated handling.
- Highly stable oxide passivated junction.
- Low forward voltage drop.
- Guardring for stress protection.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Corrosion-resistant external surfaces and readily solderable terminal leads.
- Meets MSL 1 requirements.
Applications
The MBRA1H100T3G is suitable for various applications, including:
- Low voltage, high frequency rectification.
- Free-wheeling and polarity diodes in surface mount applications.
- Automotive and industrial systems where compact size and weight are critical.
- Power management systems requiring efficient and reliable rectification.
Q & A
- What is the peak repetitive reverse voltage of the MBRA1H100T3G?
The peak repetitive reverse voltage (VRRM) is 100 V.
- What is the average rectified forward current rating of the MBRA1H100T3G?
The average rectified forward current (IO) is 1.0 A at a lead temperature (TL) of 167°C.
- What is the maximum instantaneous forward voltage of the MBRA1H100T3G at 1.0 A and 25°C?
The maximum instantaneous forward voltage (VF) is 0.76 V at 1.0 A and 25°C.
- Is the MBRA1H100T3G RoHS compliant?
- What is the thermal resistance from junction to ambient for the MBRA1H100T3G with a 700 mm^2 copper pad?
The thermal resistance from junction to ambient (RθJA) is 75°C/W with a 700 mm^2 copper pad.
- What are the storage and operating junction temperature ranges for the MBRA1H100T3G?
The storage and operating junction temperature range is from −65°C to +175°C.
- Is the MBRA1H100T3G suitable for automotive applications?
- What is the maximum non-repetitive peak surge current rating of the MBRA1H100T3G?
The non-repetitive peak surge current (IFSM) is 50 A.
- What is the maximum instantaneous reverse current of the MBRA1H100T3G at 25°C?
The maximum instantaneous reverse current (IR) is 40 μA at 25°C.
- Does the MBRA1H100T3G meet MSL 1 requirements?
