Overview
The NLAS5223BMNR2G is an advanced CMOS analog switch produced by onsemi. Fabricated in sub-micron silicon gate CMOS technology, this device is a dual, independent Single Pole Double Throw (SPDT) switch. It is designed to offer ultra-low on-resistance (RON) of 0.35 ohms at VCC = 4.3 V, making it suitable for a variety of high-performance applications. The NLAS5223BMNR2G features guaranteed Break Before Make (BBM) switching, ensuring that the switches never short the driver, and it supports single supply operation from 1.65 to 4.5 V.
Key Specifications
| Parameter | Condition | Unit | Min | Typ | Max |
|---|---|---|---|---|---|
| VCC (Positive DC Supply Voltage) | - | V | -0.5 | - | +5.5 |
| VIS (Analog Input Voltage) | - | V | -0.5 | - | VCC + 0.5 |
| RON (NC/NO On-Resistance) | VCC = 3.0 to 4.3 V, ICOM = 100 mA | Ω | 0.4 | 0.35 | 0.5 |
| RFLAT (NC/NO On-Resistance Flatness) | VCC = 3.0 to 4.3 V, ICOM = 100 mA | Ω | 0.11 | - | 0.20 |
| IANL (Continuous DC Current from COM to NC/NO) | - | mA | ±320 | - | - |
| ICLMP (Continuous DC Current into COM/NO/NC with Respect to VCC or GND) | - | mA | ±100 | - | - |
| tON (Turn-On Time) | RL = 50 Ω, CL = 35 pF | ns | - | 50 | 60 |
| tOFF (Turn-Off Time) | RL = 50 Ω, CL = 35 pF | ns | - | 30 | 40 |
| tBBM (Minimum Break-Before-Make Time) | VIS = 3.0 V, RL = 50 Ω, CL = 35 pF | ns | - | 2 | 15 |
Key Features
- Ultra-low on-resistance (RON) of 0.35 ohms at VCC = 4.3 V
- Guaranteed Break Before Make (BBM) switching
- Single supply operation from 1.65 to 4.5 V
- Full 0 to VCC signal handling capability
- High off-channel isolation
- Low standby current, ≤ 50 nA
- Low distortion
- RON flatness of 0.15 ohms
- High continuous current capability, ±320 mA through each switch
- Large current clamping diodes at analog inputs, ±100 mA continuous current capability
- Pb-free packages: WQFN10 and UQFN10
Applications
- Cell phone audio block
- Speaker and earphone switching
- Ring-tone chip/amplifier switching
- Modems
Q & A
- What is the typical on-resistance of the NLAS5223BMNR2G?
The typical on-resistance (RON) is 0.35 ohms at VCC = 4.3 V.
- What is the operating voltage range for the NLAS5223BMNR2G?
The device operates from a single supply voltage of 1.65 to 4.5 V.
- What is the maximum continuous current through each switch?
The maximum continuous current through each switch is ±320 mA.
- Does the NLAS5223BMNR2G support Break Before Make switching?
- What are the package options for the NLAS5223BMNR2G?
The device is available in Pb-free WQFN10 and UQFN10 packages.
- What is the typical turn-on and turn-off time for the NLAS5223BMNR2G?
The typical turn-on time is 50 ns, and the typical turn-off time is 30 ns.
- What is the minimum break-before-make time for the NLAS5223BMNR2G?
The minimum break-before-make time is 2 ns.
- What are some common applications for the NLAS5223BMNR2G?
- Does the NLAS5223BMNR2G have high off-channel isolation?
- What is the standby current of the NLAS5223BMNR2G?
The standby current is ≤ 50 nA.
