NLAS5223MNR2G
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onsemi NLAS5223MNR2G

Manufacturer No:
NLAS5223MNR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC SWITCH DUAL SPDT 10WQFN
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The NLAS5223MNR2G is a dual single-pole double-throw (SPDT) analog switch produced by onsemi. This component is fabricated using sub-micron silicon gate CMOS technology, making it an advanced solution for various analog switching applications. It is designed to offer ultra-low on-resistance and high performance, making it suitable for a wide range of electronic systems.

Key Specifications

ParameterValue
Configuration2 x SPDT
On Resistance - Max350 mOhms
Supply Voltage - Min1.65 V
Supply Voltage - Max3.6 V
Package Type10-WQFN (1.4x1.8)

Key Features

  • Ultra-low on-resistance: 0.5 Ω at VCC = 3.0 V ± 0.3 V.
  • Low supply voltage range: 1.65 V to 3.6 V.
  • Compatibility with various chipsets: Interfaces with 2.8 V and 1.8 V chipsets.
  • Advanced CMOS technology: Fabricated in sub-micron silicon gate CMOS technology.

Applications

The NLAS5223MNR2G is versatile and can be used in a variety of applications, including but not limited to:

  • Audio and video switching
  • Signal routing in telecommunications
  • Medical devices requiring low on-resistance switches
  • Industrial control systems
  • Consumer electronics such as smartphones and tablets

Q & A

  1. What is the configuration of the NLAS5223MNR2G?
    The NLAS5223MNR2G is configured as 2 x SPDT (single-pole double-throw).
  2. What is the maximum on-resistance of the NLAS5223MNR2G?
    The maximum on-resistance is 350 mOhms.
  3. What is the supply voltage range for the NLAS5223MNR2G?
    The supply voltage range is from 1.65 V to 3.6 V.
  4. What package type does the NLAS5223MNR2G come in?
    The NLAS5223MNR2G comes in a 10-WQFN (1.4x1.8) package.
  5. Is the NLAS5223MNR2G compatible with different chipset voltages?
    Yes, it interfaces with both 2.8 V and 1.8 V chipsets.
  6. What technology is used to fabricate the NLAS5223MNR2G?
    The NLAS5223MNR2G is fabricated using sub-micron silicon gate CMOS technology.
  7. What are some common applications of the NLAS5223MNR2G?
    Common applications include audio and video switching, telecommunications, medical devices, industrial control systems, and consumer electronics.
  8. Where can I find detailed specifications for the NLAS5223MNR2G?
    Detailed specifications can be found in the datasheet available on websites such as Mouser, Digi-Key, and the onsemi official website.
  9. Is the NLAS5223MNR2G still in production?
    Yes, the NLAS5223MNR2G is currently in production and available for order.
  10. What are the benefits of using the NLAS5223MNR2G in my design?
    The benefits include ultra-low on-resistance, low supply voltage requirements, and compatibility with various chipsets, making it a high-performance solution for analog switching applications.

Product Attributes

Switch Circuit:SPDT
Multiplexer/Demultiplexer Circuit:2:1
Number of Circuits:2
On-State Resistance (Max):300mOhm
Channel-to-Channel Matching (ΔRon):50mOhm (Max)
Voltage - Supply, Single (V+):1.65V ~ 3.6V
Voltage - Supply, Dual (V±):- 
Switch Time (Ton, Toff) (Max):50ns, 30ns
-3db Bandwidth:17MHz
Charge Injection:38pC
Channel Capacitance (CS(off), CD(off)):75pF
Current - Leakage (IS(off)) (Max):500nA
Crosstalk:-70dB @ 100kHz
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:10-WFQFN
Supplier Device Package:10-WQFN (1.4x1.8)
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Same Series
NLAS5223LMNR2G
NLAS5223LMNR2G
IC SWITCH DUAL SPDT 10WQFN

Similar Products

Part Number NLAS5223MNR2G NLAS5123MNR2G NLAS5223BMNR2G NLAS5223LMNR2G
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi
Product Status Active Active Active Obsolete
Switch Circuit SPDT - SPDT SPDT
Multiplexer/Demultiplexer Circuit 2:1 - 2:1 2:1
Number of Circuits 2 - 2 2
On-State Resistance (Max) 300mOhm - 350mOhm 300mOhm
Channel-to-Channel Matching (ΔRon) 50mOhm (Max) - 50mOhm (Max) 50mOhm (Max)
Voltage - Supply, Single (V+) 1.65V ~ 3.6V - 1.65V ~ 4.5V 1.65V ~ 3.6V
Voltage - Supply, Dual (V±) - - - -
Switch Time (Ton, Toff) (Max) 50ns, 30ns - 50ns, 50ns 50ns, 30ns
-3db Bandwidth 17MHz - 19MHz 17MHz
Charge Injection 38pC - 38pC 38pC
Channel Capacitance (CS(off), CD(off)) 75pF - 60pF 75pF
Current - Leakage (IS(off)) (Max) 500nA - 500nA 500nA
Crosstalk -70dB @ 100kHz - -70dB @ 100kHz -70dB @ 100kHz
Operating Temperature -40°C ~ 85°C (TA) - -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount - Surface Mount Surface Mount
Package / Case 10-WFQFN - 10-WFQFN 10-WFQFN
Supplier Device Package 10-WQFN (1.4x1.8) - 10-WQFN (1.4x1.8) 10-WQFN (1.4x1.8)

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