NLAS5223BLMNR2G
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onsemi NLAS5223BLMNR2G

Manufacturer No:
NLAS5223BLMNR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC SWITCH DUAL SPDT 10WQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NLAS5223BLMNR2G is an advanced CMOS analog switch produced by onsemi, fabricated in sub-micron silicon gate CMOS technology. This device is a dual, independent Single Pole Double Throw (SPDT) switch, featuring ultra-low on-resistance (RON) of 0.35 Ω at VCC = 4.3 V. It is designed for single supply operation from 1.65 to 4.5 V and offers full 0 to VCC signal handling capability, making it suitable for a variety of applications in modern electronic systems.

Key Specifications

Parameter Condition Unit Min Typ Max
VCC (Positive DC Supply Voltage) - V -0.5 - +5.5
VIS (Analog Input Voltage) - V -0.5 - VCC + 0.5
VIN (Digital Select Input Voltage) - V -0.5 - +5.5
RON (On-Resistance) VCC = 4.3 V, VIS = GND to VCC, ICOM = 100 mA Ω 0.4 0.35 0.5
RFLAT (On-Resistance Flatness) ICOM = 100 mA, VIS = 0 to VCC Ω 0.11 - 0.20
Ianl (Continuous DC Current from COM to NC/NO) - mA -320 - +320
Iclmp (Continuous DC Current into COM/NO/NC with Respect to VCC or GND) - mA -100 - +100
ICC (Maximum Quiescent Supply Current) VCC = 1.65 to 4.5 V μA - - ±2.0
tON (Turn-On Time) RL = 50 Ω, CL = 35 pF ns - 50 60
tOFF (Turn-Off Time) RL = 50 Ω, CL = 35 pF ns - 30 40

Key Features

  • Ultra-Low On-Resistance: 0.35 Ω (typ) at VCC = 4.3 V.
  • Single Supply Operation: From 1.65 to 4.5 V.
  • Full 0 to VCC Signal Handling Capability: Ensures compatibility with a wide range of signal levels.
  • High Off-Channel Isolation: Minimizes signal leakage and interference.
  • Low Standby Current: ≤ 50 nA, reducing power consumption in standby mode.
  • Low Distortion and High Continuous Current Capability: ±320 mA through each switch, with large current clamping diodes at analog inputs.
  • Break Before Make (BBM) Switching: Ensures that the switches never short the driver.
  • Pb-Free Packages: Available in WQFN10 and UQFN10 packages.

Applications

  • Cell Phone Audio Block: Ideal for audio signal switching in mobile devices.
  • Speaker and Earphone Switching: Suitable for managing audio paths in portable devices.
  • Ring-Tone Chip/Amplifier Switching: Used in various audio processing applications.
  • Modems: Applicable in data communication devices requiring analog signal switching.

Q & A

  1. What is the typical on-resistance of the NLAS5223BLMNR2G?

    The typical on-resistance (RON) is 0.35 Ω at VCC = 4.3 V.

  2. What is the operating voltage range for the NLAS5223BLMNR2G?

    The device operates from 1.65 to 4.5 V.

  3. What is the maximum continuous current through each switch?

    The maximum continuous current is ±320 mA through each switch.

  4. Does the NLAS5223BLMNR2G support full 0 to VCC signal handling?

    Yes, it supports full 0 to VCC signal handling capability.

  5. What is the turn-on and turn-off time for the NLAS5223BLMNR2G?

    The turn-on time is typically 50 ns, and the turn-off time is typically 30 ns, with RL = 50 Ω and CL = 35 pF.

  6. Is the NLAS5223BLMNR2G Pb-free?

    Yes, the device is available in Pb-free packages (WQFN10 and UQFN10).

  7. What are the common applications of the NLAS5223BLMNR2G?

    Common applications include cell phone audio blocks, speaker and earphone switching, ring-tone chip/amplifier switching, and modems.

  8. What is the maximum quiescent supply current for the NLAS5223BLMNR2G?

    The maximum quiescent supply current is ±2.0 μA.

  9. Does the NLAS5223BLMNR2G feature Break Before Make (BBM) switching?

    Yes, it features guaranteed BBM switching to prevent shorting of the driver.

  10. What is the off-channel isolation of the NLAS5223BLMNR2G?

    The off-channel isolation is typically -68 dB at f = 100 kHz.

Product Attributes

Switch Circuit:SPDT
Multiplexer/Demultiplexer Circuit:2:1
Number of Circuits:2
On-State Resistance (Max):350mOhm
Channel-to-Channel Matching (ΔRon):50mOhm (Max)
Voltage - Supply, Single (V+):1.65V ~ 4.5V
Voltage - Supply, Dual (V±):- 
Switch Time (Ton, Toff) (Max):50ns, 50ns
-3db Bandwidth:19MHz
Charge Injection:38pC
Channel Capacitance (CS(off), CD(off)):60pF
Current - Leakage (IS(off)) (Max):500nA
Crosstalk:-70dB @ 100kHz
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:10-WFQFN
Supplier Device Package:10-WQFN (1.4x1.8)
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Same Series
NLAS5223BLMNR2G
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Similar Products

Part Number NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223LMNR2G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Switch Circuit SPDT SPDT SPDT
Multiplexer/Demultiplexer Circuit 2:1 2:1 2:1
Number of Circuits 2 2 2
On-State Resistance (Max) 350mOhm 350mOhm 300mOhm
Channel-to-Channel Matching (ΔRon) 50mOhm (Max) 50mOhm (Max) 50mOhm (Max)
Voltage - Supply, Single (V+) 1.65V ~ 4.5V 1.65V ~ 4.5V 1.65V ~ 3.6V
Voltage - Supply, Dual (V±) - - -
Switch Time (Ton, Toff) (Max) 50ns, 50ns 50ns, 50ns 50ns, 30ns
-3db Bandwidth 19MHz 19MHz 17MHz
Charge Injection 38pC 38pC 38pC
Channel Capacitance (CS(off), CD(off)) 60pF 60pF 75pF
Current - Leakage (IS(off)) (Max) 500nA 500nA 500nA
Crosstalk -70dB @ 100kHz -70dB @ 100kHz -70dB @ 100kHz
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 10-WFQFN 10-WFQFN 10-WFQFN
Supplier Device Package 10-WQFN (1.4x1.8) 10-WQFN (1.4x1.8) 10-WQFN (1.4x1.8)

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