Overview
The NJVNJD2873T4G is a high-performance NPN single bipolar transistor manufactured by onsemi. This device is specifically designed for high-gain audio amplifier applications, offering superior performance and reliability. It is packaged in a DPAK (TO-252) case, suitable for surface mount applications, and is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCB | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | 50 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current - Continuous | IC | 2 | A |
| Collector Current - Peak | ICM | 3 | A |
| Base Current | IB | 0.4 | A |
| Total Device Dissipation @ TC = 25°C | PD | 15 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +175 | °C |
| DC Current Gain (hFE) @ IC = 0.5 A, VCE = 2 V | hFE | 120 - 360 | - |
| Collector-Emitter Saturation Voltage @ IC = 1 A, IB = 0.05 A | VCE(sat) | 0.3 | Vdc |
| Base-Emitter Saturation Voltage @ IC = 1 A, IB = 0.05 A | VBE(sat) | 1.2 | Vdc |
Key Features
- High DC Current Gain: The NJVNJD2873T4G offers a high DC current gain, making it suitable for high-gain audio amplifier applications.
- Low Collector-Emitter Saturation Voltage: This transistor features a low collector-emitter saturation voltage, which helps in reducing power losses and improving efficiency.
- High Current-Gain - Bandwidth Product: It has a high current-gain - bandwidth product, ensuring good performance in high-frequency applications.
- AEC-Q101 Qualified and PPAP Capable: This device is qualified to AEC-Q101 standards and is PPAP capable, making it reliable for automotive and other critical applications.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: The transistor is free from lead, halogen, and brominated flame retardants, and is compliant with RoHS standards.
Applications
- High-Gain Audio Amplifiers: The NJVNJD2873T4G is specifically designed for high-gain audio amplifier applications, where high current gain and low saturation voltage are crucial.
- Automotive Electronics: Its AEC-Q101 qualification and PPAP capability make it suitable for use in automotive electronics.
- Industrial Control Systems: It can be used in various industrial control systems where high reliability and performance are required.
- Consumer Electronics: This transistor can also be used in consumer electronics such as audio equipment and other high-performance devices.
Q & A
- What is the collector-base voltage rating of the NJVNJD2873T4G?
The collector-base voltage rating is 50 Vdc.
- What is the maximum continuous collector current for this transistor?
The maximum continuous collector current is 2 A.
- What is the typical DC current gain (hFE) of the NJVNJD2873T4G?
The typical DC current gain (hFE) ranges from 120 to 360 at IC = 0.5 A and VCE = 2 V.
- Is the NJVNJD2873T4G RoHS compliant?
- What is the operating and storage junction temperature range for this transistor?
The operating and storage junction temperature range is -65°C to +175°C.
- What are the key applications of the NJVNJD2873T4G?
The key applications include high-gain audio amplifiers, automotive electronics, industrial control systems, and consumer electronics.
- What is the collector-emitter saturation voltage of the NJVNJD2873T4G?
The collector-emitter saturation voltage is 0.3 Vdc at IC = 1 A and IB = 0.05 A.
- Is the NJVNJD2873T4G AEC-Q101 qualified?
- What is the total device dissipation at TC = 25°C?
The total device dissipation at TC = 25°C is 15 W.
- What is the base-emitter saturation voltage of the NJVNJD2873T4G?
The base-emitter saturation voltage is 1.2 Vdc at IC = 1 A and IB = 0.05 A.
