NJD2873T4
  • Share:

onsemi NJD2873T4

Manufacturer No:
NJD2873T4
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PWR NPN 2A 50V BIPO DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJD2873T4 is a high-performance NPN silicon power transistor manufactured by onsemi. Designed for surface mount applications, this transistor is particularly suited for high-gain audio amplifier circuits. It features a DPAK package, which is compact and suitable for modern electronic designs. The NJD2873T4 is known for its high DC current gain, low collector-emitter saturation voltage, and high current-gain-bandwidth product, making it an excellent choice for audio amplification and other high-current applications.

Key Specifications

Rating Symbol Value Unit
Collector-Base Voltage VCB 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Emitter-Base Voltage VEB 5 Vdc
Collector Current - Continuous IC 2 Adc
Collector Current - Peak ICM 3 Adc
Base Current IB 0.4 Adc
Total Device Dissipation @ TC = 25°C PD 15 W
Total Device Dissipation @ TA = 25°C PD 1.68 W
Operating and Storage Junction Temperature Range TJ, Tstg −65 to +175 °C
ESD - Human Body Model HBM 3B V
ESD - Machine Model MM C V
Thermal Resistance Junction-to-Case RJC 10 °C/W
Thermal Resistance Junction-to-Ambient RJA 89.3 °C/W

Key Features

  • High DC Current Gain: The NJD2873T4 offers high DC current gain, making it suitable for high-gain audio amplifier applications.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power losses and improves efficiency in the circuit.
  • High Current-Gain-Bandwidth Product: This characteristic ensures high performance in high-frequency applications.
  • Epoxy Meets UL 94 V-0 @ 0.125 in: The epoxy used in the packaging meets UL 94 V-0 standards, ensuring high safety and reliability.
  • NJV Prefix for Automotive and Other Applications: The NJV prefix indicates that the device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS regulations, ensuring environmental safety.

Applications

The NJD2873T4 is primarily designed for high-gain audio amplifier applications. Its high current gain, low collector-emitter saturation voltage, and high current-gain-bandwidth product make it an excellent choice for:

  • Audio Amplifiers
  • Automotive Electronics
  • High-Current Switching Applications
  • Power Management Circuits

Q & A

  1. What is the maximum collector-base voltage of the NJD2873T4?

    The maximum collector-base voltage (VCB) is 50 Vdc.

  2. What is the maximum collector-emitter voltage of the NJD2873T4?

    The maximum collector-emitter voltage (VCEO) is 50 Vdc.

  3. What is the continuous collector current rating of the NJD2873T4?

    The continuous collector current (IC) is 2 Adc.

  4. What is the peak collector current rating of the NJD2873T4?

    The peak collector current (ICM) is 3 Adc.

  5. Is the NJD2873T4 RoHS compliant?
  6. What is the operating junction temperature range of the NJD2873T4?

    The operating and storage junction temperature range (TJ, Tstg) is −65 to +175 °C.

  7. What is the thermal resistance junction-to-case of the NJD2873T4?

    The thermal resistance junction-to-case (RJC) is 10 °C/W.

  8. What is the thermal resistance junction-to-ambient of the NJD2873T4?

    The thermal resistance junction-to-ambient (RJA) is 89.3 °C/W.

  9. Is the NJD2873T4 suitable for automotive applications?
  10. What is the typical DC current gain of the NJD2873T4?

    The typical DC current gain (hFE) is between 120 to 360, depending on the collector current and temperature.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 50mA, 1A
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 2V
Power - Max:15 W
Frequency - Transition:65MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

-
201

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NJD2873T4 NJD2873T4G
Manufacturer onsemi onsemi
Product Status Obsolete Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A 300mV @ 50mA, 1A
Current - Collector Cutoff (Max) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V 120 @ 500mA, 2V
Power - Max 15 W 1.68 W
Frequency - Transition 65MHz 65MHz
Operating Temperature - -65°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK

Related Product By Categories

PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MPSA29-D26Z
MPSA29-D26Z
onsemi
TRANS NPN DARL 100V 0.8A TO92-3
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5