Overview
The NJD2873T4G is a high-performance NPN silicon power transistor manufactured by onsemi. Designed for surface mount applications, this transistor is particularly suited for high-gain audio amplifier applications. It features a DPAK package, which is compact and ideal for space-constrained designs. The NJD2873T4G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCB | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | 50 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current - Continuous | IC | 2 | Adc |
| Collector Current - Peak | ICM | 3 | Adc |
| Base Current | IB | 0.4 | Adc |
| Total Device Dissipation @ TC = 25°C | PD | 15 W | |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +175 °C | |
| ESD - Human Body Model | HBM | 3B V | |
| DC Current Gain (hFE) | hFE | 120 - 360 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | 0.3 Vdc | |
| Base-Emitter Saturation Voltage (VBE(sat)) | VBE(sat) | 1.2 Vdc | |
| Current-Gain Bandwidth Product (fT) | fT | 65 MHz |
Key Features
- High DC Current Gain (hFE): 120 - 360, making it suitable for high-gain audio amplifier applications.
- Low Collector-Emitter Saturation Voltage (VCE(sat)): 0.3 Vdc, which reduces power losses and improves efficiency.
- High Current-Gain Bandwidth Product (fT): 65 MHz, ensuring good high-frequency performance.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, adhering to environmental standards.
- AEC-Q101 Qualified and PPAP Capable, suitable for automotive and other demanding applications.
- Epoxy meets UL 94 V-0 @ 0.125 in, ensuring high reliability and safety.
Applications
- High-gain audio amplifier applications.
- Automotive electronics due to its AEC-Q101 qualification and PPAP capability.
- Other surface mount applications requiring high performance and reliability.
Q & A
- What is the maximum collector-emitter voltage of the NJD2873T4G transistor?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the continuous collector current rating of the NJD2873T4G?
The continuous collector current (IC) is 2 Adc.
- Is the NJD2873T4G RoHS compliant?
- What is the typical DC current gain (hFE) of the NJD2873T4G?
The typical DC current gain (hFE) ranges from 120 to 360.
- What is the collector-emitter saturation voltage (VCE(sat)) of the NJD2873T4G?
The collector-emitter saturation voltage (VCE(sat)) is 0.3 Vdc.
- What is the current-gain bandwidth product (fT) of the NJD2873T4G?
The current-gain bandwidth product (fT) is 65 MHz.
- Is the NJD2873T4G suitable for automotive applications?
- What is the operating and storage junction temperature range of the NJD2873T4G?
- What is the total device dissipation at TC = 25°C for the NJD2873T4G?
- Does the NJD2873T4G meet UL 94 V-0 standards?
- What package type does the NJD2873T4G use?
