NDFPD1N150CG
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onsemi NDFPD1N150CG

Manufacturer No:
NDFPD1N150CG
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 1500V 100MA TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDFPD1N150CG is an N-Channel Power MOSFET produced by onsemi, designed for high-voltage applications. This device is part of onsemi's high-voltage MOSFET family, known for its ruggedness and reliability. The NDFPD1N150CG is packaged in a TO-220F-3FS package, making it suitable for a variety of power management and control circuits.

Key Specifications

Parameter Value
Drain to Source Voltage (Vdss) 1500 V
Continuous Drain Current (Id) @ 25°C 100 mA
Drain-Source On-Resistance (Rds On) 150 Ω
Package Type TO-220F-3FS
Number of Channels 1 Channel

Key Features

  • High Voltage Capability: The NDFPD1N150CG can handle a drain-source voltage of up to 1500 V, making it suitable for high-voltage applications.
  • Low On-Resistance: With a drain-source on-resistance of 150 Ω, this MOSFET minimizes power losses and enhances efficiency in power circuits.
  • Compact Packaging: The TO-220F-3FS package is compact and widely used, facilitating easy integration into various designs.
  • Reliability and Ruggedness: Designed with robust construction, this MOSFET is reliable and can withstand harsh operating conditions.

Applications

The NDFPD1N150CG is suitable for a wide range of high-voltage applications, including:

  • Power management and control circuits
  • High-voltage power supplies
  • Motor control and drive systems
  • Industrial automation and control systems
  • Medical and aerospace applications requiring high reliability

Q & A

  1. What is the maximum drain-source voltage of the NDFPD1N150CG?

    The maximum drain-source voltage (Vdss) is 1500 V.

  2. What is the continuous drain current rating of the NDFPD1N150CG at 25°C?

    The continuous drain current (Id) at 25°C is 100 mA.

  3. What is the on-resistance (Rds On) of the NDFPD1N150CG?

    The drain-source on-resistance (Rds On) is 150 Ω.

  4. In what package is the NDFPD1N150CG available?

    The NDFPD1N150CG is available in a TO-220F-3FS package.

  5. What are some typical applications for the NDFPD1N150CG?

    Typical applications include high-voltage power supplies, motor control and drive systems, industrial automation, and medical and aerospace applications.

  6. Why is the NDFPD1N150CG considered reliable?

    The NDFPD1N150CG is designed with robust construction and is built to withstand harsh operating conditions, making it reliable for critical applications.

  7. Can the NDFPD1N150CG be used in high-temperature environments?

    While specific temperature ratings should be checked in the datasheet, onsemi's high-voltage MOSFETs are generally designed to operate over a wide temperature range.

  8. How does the NDFPD1N150CG minimize power losses?

    The low on-resistance (Rds On) of 150 Ω minimizes power losses and enhances efficiency in power circuits.

  9. Is the NDFPD1N150CG suitable for use in medical devices?

    Yes, the NDFPD1N150CG is suitable for use in medical devices due to its high reliability and robust construction.

  10. Where can I find detailed specifications and datasheets for the NDFPD1N150CG?

    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:4.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:80 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 20W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3 Full Pack
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