MSC2712GT1G
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onsemi MSC2712GT1G

Manufacturer No:
MSC2712GT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 50V 0.1A SC59
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MSC2712GT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring low to moderate power amplification. It is packaged in a surface-mount SC-59 package, making it suitable for modern electronic designs where space is a concern.

Key Specifications

SpecificationSymbolValueUnit
Collector-Base VoltageV(BR)CBO60Vdc
Collector-Emitter VoltageV(BR)CEO50Vdc
Collector CurrentIc100mA
Power DissipationPd200mW
Junction TemperatureTj-55 to +150°C
Storage TemperatureTstg-55 to +150°C
FrequencyfT50MHz

Key Features

  • General-purpose NPN bipolar junction transistor
  • Surface-mount SC-59 package
  • Collector-Base Voltage: 60 Vdc
  • Collector-Emitter Voltage: 50 Vdc
  • Collector Current: 100 mA
  • Power Dissipation: 200 mW
  • Operating Junction Temperature: -55 to +150°C
  • High frequency capability: 50 MHz

Applications

The MSC2712GT1G is versatile and can be used in various electronic circuits, including:

  • Amplifier circuits
  • Switching circuits
  • Audio and video amplifiers
  • Automotive and industrial control systems
  • General-purpose electronic devices requiring low to moderate power amplification

Q & A

  1. What is the package type of the MSC2712GT1G transistor?
    The MSC2712GT1G transistor is packaged in a surface-mount SC-59 package.
  2. What is the maximum collector current of the MSC2712GT1G?
    The maximum collector current is 100 mA.
  3. What is the maximum power dissipation of the MSC2712GT1G?
    The maximum power dissipation is 200 mW.
  4. What is the operating junction temperature range of the MSC2712GT1G?
    The operating junction temperature range is -55 to +150°C.
  5. What is the collector-base voltage of the MSC2712GT1G?
    The collector-base voltage is 60 Vdc.
  6. What is the collector-emitter voltage of the MSC2712GT1G?
    The collector-emitter voltage is 50 Vdc.
  7. What is the frequency capability of the MSC2712GT1G?
    The frequency capability is up to 50 MHz.
  8. Is the MSC2712GT1G RoHS compliant?
    Yes, the MSC2712GT1G is RoHS compliant.
  9. What are some common applications of the MSC2712GT1G?
    Common applications include amplifier circuits, switching circuits, audio and video amplifiers, and automotive and industrial control systems.
  10. Where can I purchase the MSC2712GT1G transistor?
    The MSC2712GT1G transistor can be purchased from various electronic component distributors such as Digi-Key, Mouser, and LCSC.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Power - Max:200 mW
Frequency - Transition:50MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SC-59
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In Stock

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Same Series
MSC2712YT1G
MSC2712YT1G
TRANS NPN 50V 0.1A SC59

Similar Products

Part Number MSC2712GT1G MSC2712YT1G MSC2712GT1
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA 500mV @ 10mA, 100mA 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V 120 @ 2mA, 6V 200 @ 2mA, 6V
Power - Max 200 mW 200 mW 200 mW
Frequency - Transition 50MHz 50MHz 50MHz
Operating Temperature 150°C (TJ) 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59 SC-59 SC-59

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