MPSA29
  • Share:

onsemi MPSA29

Manufacturer No:
MPSA29
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 100V 0.8A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MPSA29 is an NPN Darlington transistor produced by onsemi, part of the MPSAXX Series. This device is designed for applications requiring extremely high current gain at collector currents up to 500 mA. It is sourced from process 03 and is known for its high performance in various electronic systems.

Key Specifications

Parameter Symbol Value Unit
Polarity - NPN -
Type - Darlington -
Collector-Emitter Voltage (Max) VCES 100 Vdc
Collector-Base Voltage (Max) VCBO 100 Vdc
Emitter-Base Voltage (Max) VEBO 12 Vdc
Collector Current (Continuous Max) IC 800 mAdc
Total Device Dissipation (Max) PD 625 mW
DC Current Gain (Min) hFE 10,000 -
Package Style - TO-92 -
Mounting Method - Through Hole -
Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 °C
Thermal Resistance, Junction to Ambient R�JA 200 °C/W
Thermal Resistance, Junction to Case R�JC 83.3 °C/W

Key Features

  • Designed for applications requiring extremely high current gain at collector currents up to 500 mA.
  • Sourced from process 03.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  • High DC current gain (hFE) of 10,000.
  • Low collector-emitter saturation voltage (VCE(sat)).
  • High transition frequency (fT) of 125 MHz.

Applications

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Desktop PC
  • Consumer Appliances
  • LCD Monitor
  • PC Server
  • Set Top Boxes
  • Mobile Handsets

Q & A

  1. What is the maximum collector-emitter voltage of the MPSA29 transistor?

    The maximum collector-emitter voltage (VCES) of the MPSA29 transistor is 100 Vdc.

  2. What is the maximum collector current of the MPSA29 transistor?

    The maximum collector current (IC) of the MPSA29 transistor is 800 mA.

  3. What is the package style of the MPSA29 transistor?

    The MPSA29 transistor comes in a TO-92 package style.

  4. Is the MPSA29 transistor RoHS compliant?
  5. What is the DC current gain (hFE) of the MPSA29 transistor?
  6. What are the typical applications of the MPSA29 transistor?
  7. What is the thermal resistance, junction to ambient, of the MPSA29 transistor?
  8. What is the operating and storage junction temperature range of the MPSA29 transistor?
  9. What is the transition frequency (fT) of the MPSA29 transistor?
  10. How is the MPSA29 transistor mounted?

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:625 mW
Frequency - Transition:125MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:TO-92-3
0 Remaining View Similar

In Stock

$0.50
105

Please send RFQ , we will respond immediately.

Same Series
ATS-17F-141-C1-R0
ATS-17F-141-C1-R0
HEATSINK 30X30X10MM L-TAB

Similar Products

Part Number MPSA29 MPSA29G MPSA20 MPSA27 MPSA28
Manufacturer onsemi onsemi NTE Electronics, Inc Fairchild Semiconductor NTE Electronics, Inc
Product Status Active Obsolete Active Obsolete Active
Transistor Type NPN - Darlington NPN - Darlington NPN NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 800 mA 500 mA 100 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 40 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA 250mV @ 1mA, 10mA 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 500nA 500nA 100nA (ICBO) 500nA 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 10000 @ 100mA, 5V 40 @ 5mA, 10V 10000 @ 100mA, 5V 10000 @ 100mA, 5V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 125MHz 200MHz 125MHz - 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92-3 TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226)

Related Product By Categories

BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC857BW_R1_00001
BC857BW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
BC857B/DG/B3,215
BC857B/DG/B3,215
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4