MPSA29G
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onsemi MPSA29G

Manufacturer No:
MPSA29G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 100V 0.5A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MPSA29G is an NPN Bipolar Darlington Transistor manufactured by onsemi. This device is specifically designed for applications requiring high current gain, particularly in switching scenarios. It is housed in the TO-92 package, making it suitable for medium power applications. The MPSA29G simplifies circuit design, reduces board space, and minimizes component count, which are significant advantages in modern electronic design.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 100 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 12 V
Collector Current - Continuous IC 0.5 A
Operating and Storage Junction Temperature Range TJ, TSTG -55 to 150 °C
Total Device Dissipation PD 625 mW
Dissipation Derate Above 25°C PD 5.0 mW/°C
Thermal Resistance, Junction-to-Case RθJC 83.3 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W
DC Current Gain (hFE) hFE 10,000
Transition Frequency (ft) ft 125 MHz

Key Features

  • Pb-Free and RoHS Compliant: The MPSA29G is lead-free, halogen-free, and compliant with RoHS standards, making it environmentally friendly and suitable for a wide range of applications.
  • High Current Gain: With a DC current gain (hFE) of up to 10,000, this transistor is ideal for applications requiring high current amplification.
  • Medium Power Applications: Housed in the TO-92 package, it is designed for medium power applications and can handle collector currents up to 500 mA.
  • Thermal Stability: The device has specified thermal resistances (RθJC and RθJA) to ensure reliable operation under various thermal conditions.
  • Simplified Circuit Design: The Darlington configuration simplifies circuit design by reducing the number of components and the complexity of the circuit.

Applications

  • Switching Applications: The MPSA29G is particularly suited for switching applications such as print hammers, relays, solenoids, and lamp drivers.
  • Power Management: It can be used in power management circuits where high current gain and medium power handling are required.
  • Industrial Control Systems: The transistor is useful in industrial control systems for driving various loads such as motors, valves, and other actuators.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the MPSA29G?

    The maximum collector-emitter voltage (VCEO) is 100 V.

  2. What is the maximum collector current (IC) of the MPSA29G?

    The maximum collector current (IC) is 0.5 A.

  3. What is the DC current gain (hFE) of the MPSA29G?

    The DC current gain (hFE) is up to 10,000.

  4. What is the transition frequency (ft) of the MPSA29G?

    The transition frequency (ft) is 125 MHz.

  5. Is the MPSA29G RoHS compliant?

    Yes, the MPSA29G is Pb-free and RoHS compliant.

  6. What package type is the MPSA29G available in?

    The MPSA29G is available in the TO-92 package.

  7. What are some typical applications of the MPSA29G?

    Typical applications include switching applications such as print hammers, relays, solenoids, and lamp drivers.

  8. What is the maximum operating junction temperature of the MPSA29G?

    The maximum operating junction temperature is 150°C.

  9. What is the thermal resistance, junction-to-case (RθJC), of the MPSA29G?

    The thermal resistance, junction-to-case (RθJC), is 83.3 °C/W.

  10. What is the thermal resistance, junction-to-ambient (RθJA), of the MPSA29G?

    The thermal resistance, junction-to-ambient (RθJA), is 200 °C/W.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:625 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:TO-92 (TO-226)
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Same Series
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Similar Products

Part Number MPSA29G MPSA20G MPSA27G MPSA28G MPSA29
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Active
Transistor Type NPN - Darlington NPN NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 500 mA 100 mA 500 mA 500 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 100 V 40 V 60 V 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 250mV @ 1mA, 10mA 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 500nA 100nA (ICBO) 500nA 500nA 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 40 @ 5mA, 10V 10000 @ 100mA, 5V 10000 @ 100mA, 5V 10000 @ 100mA, 5V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 200MHz 125MHz - 200MHz 125MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92-3

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